Electronics-Electron Devices(Date:2009/05/07)

Presentation
表紙

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[Date]2009/5/7
[Paper #]
目次

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[Date]2009/5/7
[Paper #]
Preparation and Evaluation of SrS:Cu films for blue EL elements

Masaaki Isai,  Yuji Kurachi,  Norifumi Yamada,  Toshinori Takeuchi,  Takashi Hochin,  

[Date]2009/5/7
[Paper #]ED2009-18,CPM2009-8,SDM2009-8
Evaluation of SrS:Cu films for blue EL elements

Norifumi YAMADA,  Takashi hochin,  Masaaki ISAI,  

[Date]2009/5/7
[Paper #]ED2009-19,CPM2009-9,SDM2009-9
Effect of quartz tube on crystal properties of LiMn_2O_4 films prepared by RF magnetron sputtering

Takayuki HOSOKAWA,  Satoshi SEKIGAWA,  Masaaki ISAI,  

[Date]2009/5/7
[Paper #]ED2009-20,CPM2009-10,SDM2009-10
Preparation of Ga_2O_3 films and evaluation of oxygen sensing properties

Shinya KAYANO,  Takashi HORIUCHI,  Masaaki ISAI,  

[Date]2009/5/7
[Paper #]ED2009-21,CPM2009-11,SDM2009-11
Preparation of TiO_2 thin films by RF magnetron sputtering method and their photocatalytic properties

Tatsuya Ito,  Tatsuya Endo,  Masaaki Isai,  Tetsuya Sakai,  Yoichi Hoshi,  

[Date]2009/5/7
[Paper #]ED2009-22,CPM2009-12,SDM2009-12
A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications

M. Abdel Haleem,  M. Ichimura,  

[Date]2009/5/7
[Paper #]ED2009-23,CPM2009-13,SDM2009-13
Analysis of Atomic and Electronic Structures of Cu_2ZnSnS_4 Based on the First-Principle Calculation

Yuki NAKASHIMA,  Masaya ICHIMURA,  

[Date]2009/5/7
[Paper #]ED2009-23,CPM2009-14,SDM2009-14
Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO_2 Substrates

Akihiko HIROE,  Tetsuya GOTO,  Akinobu TERAMOTO,  Tadahiro OHMI,  

[Date]2009/5/7
[Paper #]ED2009-25,CPM2009-15,SDM2009-15
Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method

Govindasamy RAJESH,  Hisashi MORII,  Toru AOKI,  Tadanobu KOYAMA,  Yoshimi MOMOSE,  Akira TANAKA,  Tetsuo OZAWA,  Yuko INATOMI,  Yasuhiro HAYAKAWA,  

[Date]2009/5/7
[Paper #]ED2009-26,CPM2009-16,SDM2009-16
MBE-VLS growth of compound semiconductor nanowires on Si sunstrate

Masahito YAMAGUCHI,  Ji-Hyun PAEK,  Hirohide ICHIHASHI,  Isao HORIUCHI,  Nobuhiko SAWAKI,  

[Date]2009/5/7
[Paper #]ED2009-27,CPM2009-17,SDM2009-17
Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLPE

Mouleeswaran Deivasigamani,  Tadanobu Koyama,  Yasuhiro Hayakawa,  

[Date]2009/5/7
[Paper #]ED2009-28,CPM2009-18,SDM2009-18
Growth of GaP on Si Substrates at High Temperature by MOVPE

Tatsuya TAKAGI,  Takuya OKAMOTO,  Shunro FUKE,  Yasushi TAKANO,  

[Date]2009/5/7
[Paper #]ED2009-29,CPM2009-19,SDM2009-19
Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells

Saburo MITSUYOSHI,  Kazuyuki UMENO,  Noriyuki URAKAMI,  Hiroshi OKADA,  Yuzo FURUKAWA,  Akihiro WAKAHARA,  

[Date]2009/5/7
[Paper #]ED2009-30,CPM2009-20,SDM2009-20
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots

Noriyuki URAKAMI,  Ryosuke NOMA,  Kazuyuki UMENO,  Saburo MITSUYOSHI,  Hiroshi OKADA,  Yuzo FURUKAWA,  Akihiro WAKAHARA,  

[Date]2009/5/7
[Paper #]ED2009-31,CPM2009-21,SDM2009-21
MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire

Hiroyuki TAKETOMI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Fumitsugu FUKUYO,  Tomoyuki OKADA,  Hidetsugu TAKAOKA,  Harumasa YOSHIDA,  

[Date]2009/5/7
[Paper #]ED2009-32,CPM2009-22,SDM2009-22
a-plane GaN grown on r-plane sapphire by MOVPE

Bei Ma,  Reina Miyagawa,  Weiguo Hu,  Hideto Miyake,  Kazumasa Hiramatsu,  

[Date]2009/5/7
[Paper #]ED2009-33,CPM2009-23,SDM2009-23
Operation stability assessment of AlGaN/GaN HEMT

M. Tajima,  T. Hashizume,  

[Date]2009/5/7
[Paper #]ED2009-34,CPM2009-23,SDM2009-23
Electrochemical oxidation of GaN for surface control structure

Naohisa Harada,  Nanako Shiozaki,  T. Hashizume,  

[Date]2009/5/7
[Paper #]ED2009-35,CPM2009-25,SDM2009-25
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