Electronics-Electron Devices(Date:2009/02/19)

Presentation
表紙

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[Date]2009/2/19
[Paper #]
目次

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[Date]2009/2/19
[Paper #]
Eptaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices

Taiichi Otsuji,  Tetsuya Suemitsu,  Hyon-Choru Kang,  Hiromi Karasawa,  Yu Miyamoto,  Hiroyuki Handa,  Maki Suemitsu,  Eiichi Sano,  Maxim Ryzhii,  Victor Ryzhii,  

[Date]2009/2/19
[Paper #]ED2008-224,SDM2008-216
Magnetic properties of Mn-implanted SOI layers

Y. Miyazaki,  Y. Ono,  H. Kageshima,  M. Nagase,  A. Fujiwara,  E. Ohta,  

[Date]2009/2/19
[Paper #]ED2008-225,SDM2008-217
Fabrication and application for Spin injection with Magnetite/InAs heterostructure

Takeshi Ejiri,  J. Bubesh Babu,  Kanji Yoh,  

[Date]2009/2/19
[Paper #]ED2008-226,SDM2008-218
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy

Yusuke KITAUCHI,  Junichi MOTOHISA,  Yasunori Kobayashi,  Takashi FUKUI,  

[Date]2009/2/19
[Paper #]ED2008-227,SDM2008-219
Feild Emitter Array with focusing function and it's applications : Proposal of new application using FEA

Yoichiro Neo,  Masafumi Takeda,  Tomoya Tagami,  Syun Horie,  Toru Aoki,  Hidenori Mimura,  Tomoya Yoshida,  Masayoshi Nagao,  Seigo Kanemaru,  

[Date]2009/2/19
[Paper #]ED2008-228,SDM2008-220
Characteristics of Single Electron Transistor and Turnstile With Input Discretizer

Masashi TAKIGUCHI,  Shota HAYAMI,  Masaki OTSUKA,  Akio KAWAI,  Masataka MORIYA,  Tadayuki KOBAYASHI,  Hiroshi SHIMADA,  Yoshinao MIZUGAKI,  

[Date]2009/2/19
[Paper #]ED2008-229,SDM2008-221
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes

Tomohiko EBATA,  Uichiro OMAE,  Kazuya MACHIDA,  Takao WAHO,  

[Date]2009/2/19
[Paper #]ED2008-230,SDM2008-222
RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate

Koichi MAEZAWA,  Naoki KAMEGAI,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  Kazuhiro AKAMATSU,  

[Date]2009/2/19
[Paper #]ED2008-231,SDM2008-223
Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration

Yusuke TOMODA,  Watari KUME,  Michinobu HANADA,  Keisuke TAKAHASHI,  Jun-ichi SHIRAKASHI,  

[Date]2009/2/19
[Paper #]ED2008-232,SDM2008-224
Double-dot single-electron transistor fabricated in silicon nanowire

Mingyu JO,  Takuya KAIZAWA,  Masashi ARITA,  Akira FUJIWARA,  Yasuo TAKAHASHI,  

[Date]2009/2/19
[Paper #]ED2008-233,SDM2008-225
Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain

YeonJoo JEONG,  Jiezhi CHEN,  Takuya SARAYA,  Toshiro HIRAMOTO,  

[Date]2009/2/19
[Paper #]ED2008-234,SDM2008-226
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Device

Daisuke NAKATA,  RAHMAN Shaharin Fadzli Abd,  Yuta SHIRATORI,  Seiya KASAI,  

[Date]2009/2/19
[Paper #]ED2008-235,SDM2008-227
The fourth passive circuit element relating magnetic flux to charge

Yoshihito AMEMIYA,  Yasuo TAKAHASHI,  

[Date]2009/2/19
[Paper #]ED2008-236,SDM2008-228
Observation of Stochastic Resonance in Nanodevice-integrated Systems Utilizing GaAs-based Nanowire Network and Its Analysis

Seiya KASAI,  Tetsuya ASAI,  Yuta SHIRATORI,  Hong-Quan ZHAO,  

[Date]2009/2/19
[Paper #]ED2008-237,SDM2008-229
Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device

Hiroya IKEDA,  Faiz SALLEH,  Kiyosumi ASAI,  Akihiro ISHIDA,  

[Date]2009/2/19
[Paper #]ED2008-238,SDM2008-230
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[Date]2009/2/19
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[Date]2009/2/19
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[Date]2009/2/19
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