Electronics-Electron Devices(Date:2008/06/06)

Presentation
表紙

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[Date]2008/6/6
[Paper #]
目次

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[Date]2008/6/6
[Paper #]
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure

Nariaki TANAKA,  Yasunobu SUMIDA,  Hiroji KAWAI,  Toshi-kazu SUZUKI,  

[Date]2008/6/6
[Paper #]ED2008-22
I-V and C-V characteristics of p-GaN Schottky contacts : Carrier concentration and metal work function dependences

Yoshihiro Fukushima,  Keita Ogisu,  Masaaki Kuzuhara,  Kenji Shiojima,  

[Date]2008/6/6
[Paper #]ED2008-23
Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT

M. Tajima,  J. Kotani,  K. Sugawara,  T. Hashizume,  

[Date]2008/6/6
[Paper #]ED2008-24
Characterization of N-doped AlSiO film for wide bandgap semiconductors

Naoyoshi Komatsu,  Hirotaka Tanaka,  Hidemitsu Aoki,  Keiko Matsunouchi,  Chiharu Kimura,  Yukihiko Okumura,  Takashi Sugino,  

[Date]2008/6/6
[Paper #]ED2008-25
Reliability evaluation of MOCVD-grown InP/InGaAs HBTs

Keita Ogisu,  Yosihiro Fukusima,  Kenji Shiojima,  Gako Araki,  Hideo Yokohama,  

[Date]2008/6/6
[Paper #]ED2008-26
Wet Cleaning Processing of VLSI Devices by Functional Waters

Masako KODERA,  Yoshitaka MATSUI,  Naoto MIYASHITA,  

[Date]2008/6/6
[Paper #]ED2008-27
Particle Performance Improvement of Single-Wafer Wet Cleaning for Next Generation

Ken-ichi SANO,  Katsuhiko Miya,  Akira Izumi,  Jim Snow,  Atsuro Eitoku,  

[Date]2008/6/6
[Paper #]ED2008-28
Study on Deterioration of Resist Removal Efficiency in SPM, and Experimental Proof of Ashingless Resist Removal Using Electrolyzed Sulfuric Acid Solution

Tatsuo NAGAI,  Haruyoshi YAMAKAWA,  Minoru UCHIDA,  Toru OHTSU,  Norihito IKEMIYA,  

[Date]2008/6/6
[Paper #]ED2008-29
Drying behavior of remaining liquid film and droplet in Marangoni drying

Yasuharu Miyamoto,  Junji Kamoshida,  Jun Yamada,  

[Date]2008/6/6
[Paper #]ED2008-30
300mm Wafer Stain Formation by Spin Etching

Satomi MASHIMOTO,  Masaharu WATANABE,  Keisuke SATO,  

[Date]2008/6/6
[Paper #]ED2008-31
InP HEMT device technology for ultra-high-speed MMIC

Naoki HARA,  Tsuyoshi TAKAHASHI,  Kozo MAKIYAMA,  Toshihiro OHKI,  

[Date]2008/6/6
[Paper #]ED2008-32
Parameter Estimation of Nonlinear Equivalent Circuit in Compound Semiconductor Triple-Barrier Resonant Tunneling Diodes

Yuichi IKI,  Masaaki SHINADA,  Mamoru NAOI,  Naoya ASAOKA,  Michihiko SUHARA,  Tsugunori OKUMURA,  

[Date]2008/6/6
[Paper #]ED2008-33
Fabrication of Resonant Tunneling Device Blocks for Fluidic Self-Assembly

Koichi MAEZAWA,  Naoki KAMEGAI,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  Kazuhiro AKAMATSU,  

[Date]2008/6/6
[Paper #]ED2008-34
Heterogeneous integration of InAs thin films by epitaxial lift-off and van der Waals bonding

Hayato TAKITA,  Masahiro KUDO,  Nariaki TANAKA,  Toshi-kazu SUZUKI,  

[Date]2008/6/6
[Paper #]ED2008-35
MBE growth of high In-content InGaAs/InAlAs heterojunction and its spin-orbit interaction in the 2DEG layer

Hyonkwan CHOI,  Shunsuke NITTA,  Syoji YAMADA,  

[Date]2008/6/6
[Paper #]ED2008-36
Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In) surface reconstruction

Masayuki MORI,  Mitsufumi SAITO,  Kyohei NAGASHIMA,  Koji UEDA,  Tatsuo YOSHIDA,  Koichi MAEZAWA,  

[Date]2008/6/6
[Paper #]ED2008-37
Effects of In and Sb mono-layers to form rotated InSb films on a Si(111)substrate

Mitsufumi SAITO,  Masayuki MORI,  Koji UEDA,  Koichi MAEZAWA,  

[Date]2008/6/6
[Paper #]ED2008-38
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[Date]2008/6/6
[Paper #]
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