Electronics-Electron Devices(Date:2007/01/25)

Presentation
表紙

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[Date]2007/1/25
[Paper #]
目次

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[Date]2007/1/25
[Paper #]
Physics-Based SPICE Modeling of Triple Barrier Resonant Tunneling Diodes

Naoya ASAOKA,  Michihiko SUHARA,  Tsugunori OKUMURA,  

[Date]2007/1/25
[Paper #]ED2006-240,SDM2006-228
Analysis on Resonant-Tunneling 4RTD Logic Gate Operation

Hiroki OKUYAMA,  Kentaro SUGAWARA,  Tomohiko EBATA,  Takao WAHO,  

[Date]2007/1/25
[Paper #]ED2006-241,SDM2006-229
A resonant tunneling diode pair oscillator for high power operation

Koichi MAEZAWA,  Yohei OOKAWA,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  

[Date]2007/1/25
[Paper #]ED2006-242,SDM2006-230
SiGe Quantum Effect Devices : Resonant Tunneling Diode and Ge Dot Array Technologies

Yoshiyuki SUDA,  Hirotaka Maekawa,  Yoshihiro SANO,  Yoichi TAKAHASHI,  Tadamasa KOBAYASHI,  Hiroaki HANABUSA,  

[Date]2007/1/25
[Paper #]ED2006-243,SDM2006-231
Theoretical Analysis of Fluoride-based Intersubband Transition Laser on Si substrate

Keisuke JINEN,  Kaoru UCHIDA,  Shinji KODAIRA,  Masahiro WATANABE,  Masahiro ASADA,  

[Date]2007/1/25
[Paper #]ED2006-244,SDM2006-232
Study on A Novel Logic-Circuit Implementation Scheme Utilizing Topological Affinity between Decision-Diagram Representation of Logic Functions and Nanowire Network Structures

Seiya KASAI,  Tatsuya NAKAMURA,  Yuta SHIRATORI,  

[Date]2007/1/25
[Paper #]ED2006-245,SDM2006-233
Multi-input single-electron device using Si nanodot array

Takuya KAIZAWA,  Masashi ARITA,  Akira FUJIWARA,  Kenji YAMAZAKI,  Yukinori ONO,  Hiroshi INOKAWA,  Yasuo TAKAHASHI,  

[Date]2007/1/25
[Paper #]ED2006-246,SDM2006-234
Spiking Neuron Devices consisting with Single-Flux-Quantum Circuits and its Applications

Tetsuya HIROSE,  Tetsuya ASAI,  Yoshihito AMEMIYA,  

[Date]2007/1/25
[Paper #]ED2006-247,SDM2006-235
Spin-orbit interaction dependence on vertical electric field in InAs based HEMTs

Takashi Matsuda,  Kanji Yoh,  

[Date]2007/1/25
[Paper #]ED2006-248,SDM2006-236
Fabrication of epitaxial magnetic tunnel junctions with a Heusler alloy Co_2Cr_<0.6>Fe_<0.4>Al thin film and a MgO tunnel barrier and their tunnel magnetoresistance characteristics

Takao MARUKAME,  Takayuki ISHIKAWA,  Ken-ichi MATSUDA,  Tetsuya UEMURA,  Masafumi YAMAMOTO,  

[Date]2007/1/25
[Paper #]ED2006-249,SDM2006-237
Non-volatile Ternary Content Addressable Memory using CoFe-based Magnetic Tunnel Junction

Tetsuya UEMURA,  Takao MARUKAME,  Ken-ichi MATSUDA,  Masafumi YAMAMOTO,  

[Date]2007/1/25
[Paper #]ED2006-250,SDM2006-238
Electronic transport properties of nanographite on Silicon dioxide

Keita KONISHI,  Takashi MATUSDA,  Kanji YOH,  

[Date]2007/1/25
[Paper #]ED2006-251,SDM2006-239
Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures

Masatoshi KOYAMA,  Hiroshi TAKAHASHI,  Tatsuya INOUE,  Toshihiko MAEMOTO,  Shigehiko SASA,  Masataka INOUE,  

[Date]2007/1/25
[Paper #]ED2006-252,SDM2006-240
Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates

Tatsuya NAKAMURA,  Seiya KASAI,  Yuta SHIRATORI,  Tamotsu HASHIZUME,  

[Date]2007/1/25
[Paper #]ED2006-253,SDM2006-241
Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

Kensaku Ohkura,  Tetsuya Kitade,  Anri Nakajima,  

[Date]2007/1/25
[Paper #]ED2006-254,SDM2006-242
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays

Daniel MORARU,  Yukinori ONO,  Hiroshi INOKAWA,  Kiyohito YOKO,  Ratno NURYAD,  Hiroya IKEDA,  Michiharu TABE,  

[Date]2007/1/25
[Paper #]ED2006-255,SDM2006-243
Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate

Zainal BURHANUDIN,  Ratno NURYADI,  Michiharu TARE,  

[Date]2007/1/25
[Paper #]ED2006-256,SDM2006-244
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[Date]2007/1/25
[Paper #]
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