Electronics-Electron Devices(Date:2006/06/02)

Presentation
表紙

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[Date]2006/6/2
[Paper #]
目次

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[Date]2006/6/2
[Paper #]
Growth condition dependence of tilt and twist angle distribution for MOVPE InN

Yoshinori HOUCHIN,  Yasuhiko NAGAI,  Akihiro HASHIMOTO,  Akio YAMAMOTO,  

[Date]2006/6/2
[Paper #]ED2006-42
Two-dimensional electron gases in InGaSb/InAlSb heterojunctions grown on GaAs(001)

Toshi-kazu SUZUKI,  Taku SATO,  Masashi AKABORI,  Syoji YAMADA,  

[Date]2006/6/2
[Paper #]ED2006-43
InP buried growth of SiO_2 wires by MOVPE and it's application for reduction of collector capacitance

Yasuyuki MIYAMOTO,  Masashi ISHIDA,  Tohru YAMAMOTO,  Tsukasa MIURA,  Kazuhito FURUYA,  

[Date]2006/6/2
[Paper #]ED2006-44
Improvement of Electerical Characteristics by Lateral Scale-Down Technology on InP-based HEMTs

Hideaki MATSUZAKI,  Takashi MARUYAMA,  Masami TOKUMITSU,  Takatomo ENOKI,  

[Date]2006/6/2
[Paper #]ED2006-45
Theoretical Analysis of Enhancement-mode AlGaN/GaN HEMTs

Youichi TAKAKUWA,  Taketoshi NISHIDA,  Masaaki KUZUHARA,  

[Date]2006/6/2
[Paper #]ED2006-46
Wide-Bandgap Semiconductor Devices for Automobile Applications

Hiroyuki UEDA,  Tsutomu UESUGI,  Tetsu KACHI,  

[Date]2006/6/2
[Paper #]ED2006-47
Subthreshold characteristics of AlGaN/GaN heterojunction field-effect transistors depending on gate-electrodes

Nariaki TANAKA,  Hiroji KAWAI,  Toshi-kazu SUZUKI,  

[Date]2006/6/2
[Paper #]ED2006-48
Development of GaN-MISFETs

Masahiko KURAGUCHI,  Yoshiharu TAKADA,  Takashi SUZUKI,  Mayumi HIROSE,  Kunio Tsuda,  

[Date]2006/6/2
[Paper #]ED2006-49
Fully ion-implanted MESFET on a bulk semi-insulating 4H-SiC substrate

Makoto OGATA,  Shuji KATAKAMI,  Shuichi ONO,  Manabu ARAI,  

[Date]2006/6/2
[Paper #]ED2006-50
Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs.

Hiroshi SAITO,  Shuichi ITO,  Masaaki KUZUHARA,  

[Date]2006/6/2
[Paper #]ED2006-51
Investigation of AlGaInP Surfaces Dry-Etched in SiCl_4/Ar Inductively Coupled Plasmas

Takafumi TANIGUCHI,  Takeshi KIKAWA,  Kazunori SHINODA,  

[Date]2006/6/2
[Paper #]ED2006-52
Characterization of residual ions and neutralization coefficient in Argon Fast Atom Beam Source for dry etching process

Norihiko Matsuzaka,  Michihiko Suhara,  Eigo Matsuura,  Tsugunori Okumura,  

[Date]2006/6/2
[Paper #]ED2006-53
Fabrication of Sub-transistor Via-holes Using Citric-acid-based Wet Etching

Hiroyuki UCHIYAMA,  Hiroshi OHTA,  Takashi SHIOTA,  Chisaki TAKUBO,  Kenichi TANAKA,  Kazuhiro MOCHIZUKI,  

[Date]2006/6/2
[Paper #]ED2006-54
A Monolithically Integrated of HEMT and Schottky Barrier Diode Using InGaP etching stopper layer

Junichi OKAYASU,  Takahiro YASHIRO,  Tatsuru ORIKASA,  

[Date]2006/6/2
[Paper #]ED2006-55
Assembly of AlGaAs/GaAs HEMTs on AlN ceramic substrates using fluidic self-assembly

Ikuo SOGA,  Yutaka OHNO,  Shigeru KISHIMOTO,  Koichi MAEZAWA,  Takashi MIZUTANI,  

[Date]2006/6/2
[Paper #]ED2006-56
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[Date]2006/6/2
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