Electronics-Electron Devices(Date:2006/01/11)

Presentation
表紙

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[Date]2006/1/11
[Paper #]
目次

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[Date]2006/1/11
[Paper #]
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology

Takashi YOSHIDA,  Yoshimichi FUKASAWA,  Tadayoshi DEGUCHI,  Kiyoshi KAWAGUCHI,  Takahiro SUGIYAMA,  Atsushi NAKAGAWA,  

[Date]2006/1/11
[Paper #]ED2005-192,MW2005-146
40-Gbit/s digital ICs using InP HEMTs

Toshihide SUZUKI,  Yoichi KAWANO,  Yasuhiro NAKASHA,  Kozo MAKIYAMA,  Tsuyoshi TAKAHASHI,  Naoki HARA,  Tatsuya HIROSE,  

[Date]2006/1/11
[Paper #]ED2005-193,MW2005-147
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs

Kimikazu Sano,  Hiroyuki Fukuyama,  Koichi Murata,  Kenji Kurishima,  Norihide Kashio,  Takatomo Enoki,  Hirohiko Sugahara,  

[Date]2006/1/11
[Paper #]ED2005-194,MW2005-148
120-GHz Band 10-Gbit/s Millimeter-wave MMIC Waveguide Modules for Wireless Access System : for Wireless Data Transmittion System for HDTV and Data Storages

Toshihiko KOSUGI,  Akihiko HIRATA,  Hirohiko SUGAHARA,  Masami TOKUMITU,  

[Date]2006/1/11
[Paper #]ED2005-195,MW2005-149
Increase of collector current in hot electron transistors controlled by gate bias

Issei KASHIMA,  Akira SUWA,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2006/1/11
[Paper #]ED2005-196,MW2005-150
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias

Nobuya MACHIDA,  Mitsuhiko IGARASHI,  Tomohiro YAMADA,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2006/1/11
[Paper #]ED2005-197,MW2005-151
Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors

Airi KUROKAWA,  Zhi JIN,  Hiroshi ONO,  Kazuo Uchida,  Shinji NOZAKI,  Hiroshi MORISAKI,  

[Date]2006/1/11
[Paper #]ED2005-198,MW2005-152
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[Date]2006/1/11
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[Date]2006/1/11
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[Date]2006/1/11
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