Electronics-Electron Devices(Date:2005/10/07)

Presentation
表紙

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[Date]2005/10/7
[Paper #]
目次

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[Date]2005/10/7
[Paper #]
Simulation of Phase Separation in InAlBN

Takeshi KIMURA,  Takashi MATSUOKA,  

[Date]2005/10/7
[Paper #]ED2005-139,CPM2005-126,LQE005-66
Characteristics of Group III Nitrides Grown by PLD

Hiroshi FUJIOKA,  Jistuo OHTA,  Shigeru INOUE,  Atsushi KOBAYASHI,  Koichiro OKAMOTO,  Taewon KIM,  Nobuyuki MATSUKI,  

[Date]2005/10/7
[Paper #]ED2005-140,CPM2005-127,LQE005-67
Low temperature deposition of AlN films by compound-source MBE technique

Toshiaki Kobayashi,  Kouji Hirayama,  Shinichi Egawa,  Miwako Akiyama,  Koichi Sugimoto,  Taichi Baba,  Tohru Honda,  Hideo Kawanishi,  

[Date]2005/10/7
[Paper #]ED2005-141,CPM2005-128,LQE005-68
Fabrication processes of electroluminescent devices based on GaN crystallites

Taichi Baba,  Miwako Akiyama,  Shinichi Egawa,  Toshiaki Kobayashi,  Noriyuki Hasunuma,  Tohru Honda,  Hideo Kawanishi,  

[Date]2005/10/7
[Paper #]ED2005-142,CPM2005-129,LQE005-69
Growth and characterization in AlGaN using polished AlN epilayer

Norihiro MASUDA,  Akira ISHIGA,  Yuhuai LIU,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Tomohiko SHIBATA,  Mitsuhiro TANAKA,  Masaya HARAGUCHI,  Noriyuki KUWANO,  

[Date]2005/10/7
[Paper #]ED2005-143,CPM2005-130,LQE005-70
The influence of Si doping to high Al mole fraction AlGaN

Takuya Katsuno,  Takashi Ohnishi,  Yuhuai Liu,  Dabing Li,  Tomohiko Shibata,  Mitsuhiro Tanaka,  Hideto Miyake,  Kazumasa Hiramatsu,  

[Date]2005/10/7
[Paper #]ED2005-144,CPM2005-131,LQE005-71
Growth of AlN crystal on various SiC substrates by sublimation method

N. Tsuchiya,  K. Balakrishnan,  M. Iwaya,  S. Kamiyama,  H. Amano,  I. Akasaki,  K. Shimono,  T. Noro,  T. Takagi,  T. Furusho,  

[Date]2005/10/7
[Paper #]ED2005-145,CPM2005-132,LQE005-72
Development of high quality SiC substrates

Tomoaki FURUSHO,  Ryohei KOBAYASHI,  Makoto SASAKI,  Toshihiko HAYASHI,  Hiroyuki KINOSHITA,  Hiromu SHIOMI,  

[Date]2005/10/7
[Paper #]ED2005-146,CPM2005-133,LQE005-73
Liquid sensor using gateless AlGaN/GaN HEMT structure

Takuya Kokawa,  Takeshi Kimura,  Taketomo Sato,  Seiya Kasai,  Hideki Hasegawa,  Tamotsu Hashizume,  

[Date]2005/10/7
[Paper #]ED2005-147,CPM2005-134,LQE005-74
Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure

Kazushi MATSUO,  Takeshi KIMURA,  Hideki HASEGAWA,  Tamotsu HASHIZUME,  

[Date]2005/10/7
[Paper #]ED2005-148,CPM2005-135,LQE005-75
Hydrogen generation by photoelectrolysis using nitride semiconductors

Katsushi FUJII,  Masato ONO,  Takashi ITO,  Yasuhiro IWAKI,  Kazuhiro OHKAWA,  

[Date]2005/10/7
[Paper #]ED2005-149,CPM2005-136,LQE005-76
High-efficient and high-power GaN-based blue-violet laser diodes

Kyosuke Kuramoto,  Akihito Ohno,  Tomoo Yamada,  Hiroaki Okagawa,  Zempei Kawazu,  Kazushige Kawasaki,  Nobuyuki Tomita,  Katsuomi Shiozawa,  Kyozo Kanamoto,  Hiroshi Watanabe,  Masayoshi Takemi,  Tetsuya Yagi,  Hiroaki Murata,  Akihiro Shima,  

[Date]2005/10/7
[Paper #]ED2005-150,CPM2005-137,LQE005-77
High-Power Blue-Violet Laser Diodes for Optical Disc Systems

Takashi KANO,  Yasuhiko NOMURA,  Masayuki HATA,  Daijiro INOUE,  Masayuki SHONO,  

[Date]2005/10/7
[Paper #]ED2005-151,CPM2005-138,LQE005-78
Characterization of InGaN Nanocolumn LEDs Grown by RF-Plasma Assisted Molecular Beam Epitaxial Growth

Akihiko KIKUCHI,  Makoto TADA,  Katsumi KISHINO,  

[Date]2005/10/7
[Paper #]ED2005-152,CPM2005-139,LQE005-79
Observation of High Internal Quantum Efficiency from Quaternary InAlGaN Quantum Well with 330nm-band UV Emission

Hideki HIRAYAMA,  Takayoshi TAKANO,  Tomoaki OHASHI,  Sachie FUJIKAWA,  Norihiko KAMATA,  Yukihiro KONDO,  

[Date]2005/10/7
[Paper #]ED2005-153,CPM2005-140,LQE005-80
Correlation between threading dislocations and recombination dynamics in InGaN quantum wells

Akio KANETA,  Mitsuru FUNATO,  Yukio NARUKAWA,  Takashi MUKAI,  Yoichi KAWAKAMI,  

[Date]2005/10/7
[Paper #]ED2005-154,CPM2005-141,LQE005-81
Multicolor emission from InGaN/GaN three-dimensional quantum structures

Mitsuru Funato,  Teruhisa Kotani,  Takeshi Kondou,  Koji Nishiduka,  Yukio Narukawa,  Takashi Mukai,  Yoichi Kawakami,  

[Date]2005/10/7
[Paper #]ED2005-155,CPM2005-142,LQE005-82
PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2"×6 wafers)

Kazutada IKENAGA,  Akinori UBUKATA,  Akira YAMAGUCHI,  Nakao AKUTSU,  Kinji FUJII,  Kou MATSUMOTO,  

[Date]2005/10/7
[Paper #]ED2005-156,CPM2005-143,LQE005-83
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