Electronics-Electron Devices(Date:2005/10/06)

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[Date]2005/10/6
[Paper #]
目次

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[Date]2005/10/6
[Paper #]
High-quality InN grown on micro-facetted InN template

Daisuke MUTO,  Hiroyuki NAOI,  Tsutomu ARAKI,  Sachio KITAGAWA,  Masahito KUROUCHI,  Hyunseok NA,  Yasushi NANISHI,  

[Date]2005/10/6
[Paper #]ED2005-118,CPM2005-105,LQE005-45
NH_3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN

Hiroshi MIWA,  Yasuhiko NAGAI,  Akihiro HASHIMOTO,  Akio YAMAMOTO,  

[Date]2005/10/6
[Paper #]ED2005-119,CPM2005-106,LQE005-46
(11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE : Investigation of Non-polar InN

Y. Kumagai,  A. Tsuyuguchi,  K. Teraki,  T. Araki,  H. Naoi,  Y. Nanishi,  

[Date]2005/10/6
[Paper #]ED2005-120,CPM2005-107,LQE005-47
Polarity determination of InN by atomic hydrogen irradiation

Yuya HAYAKAWA,  Daisuke MUTO,  Hiroyuki NAOI,  Akira SUZUKI,  Tsutomu ARAKI,  Yasushi NANISHI,  

[Date]2005/10/6
[Paper #]ED2005-121,CPM2005-108,LQE005-48
Growth and Characterization of InN/InGaN multiple quantum wells by RF-MBE

Tatsuo OHASHI,  Shunsuke ISHIZAWA,  Petter Holmstrom,  Akihiko KIKUCHI,  Katsumi KISHINO,  

[Date]2005/10/6
[Paper #]ED2005-122,CPM2005-109,LQE005-49
Characterization of InN/InGaN quantum well structures by RF-MBE

Masahito KUROUCHI,  Shinya TAKADO,  Hiroyuki NAOI,  Tsutomu ARAKI,  Yasushi NANISHI,  

[Date]2005/10/6
[Paper #]ED2005-123,CPM2005-110,LQE005-50
Growth and Characterization of AlInN Ternary Alloys and InN/AlInN MQWs

Wataru Terashima,  Song Bek Che,  Yoshihiro Ishitani,  Akihiko Yoshikwa,  

[Date]2005/10/6
[Paper #]ED2005-124,CPM2005-111,LQE005-51
Mg doping of MOVPE InN using CP_2Mg

Yasuhiko NAGAI,  Hiroshi MIWA,  Hirokazu NIWA,  Akihiro HASHIMOTO,  Akio YAMAMOTO,  

[Date]2005/10/6
[Paper #]ED2005-125,CPM2005-112,LQE005-52
C-band AlGaN/GaN HEMTs with 170W Output Power

Yoshiharu Takada,  Hiroyuki Sakurai,  Keiichi Matsushita,  Kazutoshi Masuda,  Shinji Takatsuka,  Masahiko Kuraguchi,  Takuma Suzuki,  Takashi Suzuki,  Mayumi Hirose,  Hisao Kawasaki,  Kazutaka Takagi,  Kunio Tsuda,  

[Date]2005/10/6
[Paper #]ED2005-126,CPM2005-113,LQE005-53
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

Kenji SHIOJIMA,  Takashi MAKIMURA,  Tetsuya SUEMITSU,  Naoteru SHIGEKAWA,  Masanobu HIROKI,  Haruki YOKOYAMA,  

[Date]2005/10/6
[Paper #]ED2005-127,CPM2005-114,LQE005-54
Pnp AlGaN/GaN HBTs Operating Under High-Temperature and High-Power

Kazuhide KUMAKURA,  Toshiki MAKIMOTO,  

[Date]2005/10/6
[Paper #]ED2005-128,CPM2005-115,LQE005-55
Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications

Ken Nakata,  Takeshi Kawasaki,  Seiji Yaegassi,  

[Date]2005/10/6
[Paper #]ED2005-129,CPM2005-116,LQE005-56
AlGaN/GaN heterojunction field-effect transistors with InAlGaN quaternary alloy capping layers lattice matched to GaN

Satoshi NAKAZAWA,  Tetsuzo UEDA,  Kaoru INOUE,  Tsuyoshi TANAKA,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  

[Date]2005/10/6
[Paper #]ED2005-130,CPM2005-117,LQE005-57
Characteristics of AlGaN/GaN HEMT on (111) Silicon Substrates

Yoshiaki KATAYAMA,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  

[Date]2005/10/6
[Paper #]ED2005-131,CPM2005-118,LQE005-58
Lateral Tunneling Transport in Sub micron Gates on AlGaN/GaN HFETs

Junji Kotani,  Seiya Kasai,  Hideki Hasegawa,  Tamotsu Hashizume,  

[Date]2005/10/6
[Paper #]ED2005-132,CPM2005-119,LQE005-59
Correlation between the leakage current of GaN-layer and the luminescence intensity

Akihiro HINOKI,  Yuichi HIROYAMA,  Tadayoshi TSUCHIYA,  Tomoyuki YAMADA,  Masayuki IWAMI,  Junjiroh KIKAWA,  Tsutomu ARAKI,  Akira SUZUKI,  Yasushi NANISHI,  

[Date]2005/10/6
[Paper #]ED2005-133,CPM2005-120,LQE005-60
Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

Tomoyuki YAMADA,  Tadayoshi TSUCHIYA,  Junjiroh KIKAWA,  Masayuki IWAMI,  Tsutomu ARAKI,  Akira SUZUKI,  Yasushi NANISHI,  

[Date]2005/10/6
[Paper #]ED2005-134,CPM2005-121,LQE005-61
Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Thermal Annealing

Takayuki SAWADA,  Satoshi YONETA,  Kensuke TAKAHASHI,  Seong Woo KIM,  Toshimasa SUZUKI,  

[Date]2005/10/6
[Paper #]ED2005-135,CPM2005-122,LQE005-62
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