Electronics-Electron Devices(Date:2004/06/04)

Presentation
表紙

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[Date]2004/6/4
[Paper #]
目次

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[Date]2004/6/4
[Paper #]
Fabrication of Depletion/Enhancement mode InAlAs/InGaAs : MOSHEMT with nm-thin gate oxide formed by Ozone oxidation

N.C. Paul,  K. Nakamura,  M. Takebe,  K. Iiyama,  S. Takamiya,  

[Date]2004/6/4
[Paper #]ED2004-35
Mechanical Sterss Caused by Adsorption of O or N on a Ga-terminated (100) GaAs Surface

H. Seto,  S. Miyamura,  T. Inokuma,  K. Iiyama,  S. Takamiya,  

[Date]2004/6/4
[Paper #]ES2004-36
N-channel Enhancement : Inversion Mode GaAs-MISFETs with Gate Insulating Layers Formed by Dry Oxi-Nitridation

Mitoko TAMETOU,  Masahide TAKEBE,  Narayan Chandra Paul,  Kouichi IIYAMA,  Saburo TAKAMIYA,  

[Date]2004/6/4
[Paper #]ED2004-37
Analysis of Dry Etching Damage using Photoemission Spectroscopy

Takeshi KIKAWA,  Takafumi TANIGUCHI,  Hiroyuki UCHIYAMA,  

[Date]2004/6/4
[Paper #]ED2004-38
Monolithic integration of UTC-PDs and HBTs using Be ion implantation

Norihide KASHIO,  Shoji YAMAHATA,  Minoru IDA,  Kenji KURISHIMA,  Takatomo ENOKI,  

[Date]2004/6/4
[Paper #]ED2004-39
A Study for Fabrication Process of Resonant Tunneling Devices with GaAs Dry Etching by using Fast Atom Beam

Michihiko Suhara,  Hajime Horie,  Masakazu Fukumitsu,  Naoya Asaoka,  Tsugunori Okumura,  

[Date]2004/6/4
[Paper #]ED2004-40
InP Backside Via Hole Formation Using HI Gas

Kenji KOTANI,  Takeshi KAWASAKI,  Seiji YAEGASHI,  Hiroshi YANO,  

[Date]2004/6/4
[Paper #]ED2004-41
Analysis of Excess Leakage Currents in Nitride-Based Schottky Diodes Based on Thin Surface Barrier Model

Junji Kotani,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]2004/6/4
[Paper #]ED2004-42
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[Date]2004/6/4
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[Date]2004/6/4
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