Electronics-Electron Devices(Date:2003/06/07)

Presentation
表紙

,  

[Date]2003/6/7
[Paper #]
目次

,  

[Date]2003/6/7
[Paper #]
Fabrication of backside thermal via-holes and emitter electrodes for InGaP/GaAs collector-up HBTs

Chisaki TAKUBO,  Kazuhiro MOCHIZUKI,  Kenichi TANAKA,  Hiroyuki UCHIYAMA,  Takafumi TANIGUCHI,  Takashi SHIOTA,  

[Date]2003/6/7
[Paper #]ED2003-58
0.18μm high-speed GaAs-MESFET processing with i-line lithography & Ion-implantation technique

Masataka WATANABE,  Daiji FUKUSHI,  Shigeru NAKAJIMA,  

[Date]2003/6/7
[Paper #]ED2003-59
Fabrication of 0.1μm-gate InP HEMTs Using i-line Lithography

K. Sawada,  K. Makiyama,  T. Takahashi,  K. Nozaki,  M. Igarashi,  J. Kon,  N. Hara,  

[Date]2003/6/7
[Paper #]ED2003-60
Quasi-millimeter-wave high power FET with embedded 0.2μm gates in SiO_2

Kensuke KASAHARA,  Katsumi YAMANOGUCHI,  Yasuhiro MURASE,  Kouji MATSUNAGA,  

[Date]2003/6/7
[Paper #]ED2003-61
Fabrication of GaInAs/InP Buried Metal heterojunction bipolar transistors with a 0.1-μm-wide emitter

Keigo YOKOYAMA,  Koji MATSUDA,  Toshiro NONAKA,  Katuhiko TAKEUCHI,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2003/6/7
[Paper #]ED2003-62
奥付

,  

[Date]2003/6/7
[Paper #]
複写される方へ

,  

[Date]2003/6/7
[Paper #]