Electronics-Electron Devices(Date:2003/06/06)

Presentation
表紙

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[Date]2003/6/6
[Paper #]
目次

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[Date]2003/6/6
[Paper #]
Fabrication and Characterization of GaAs MISFETs with Oxide or Oxi-nitride Gate Insulating Layers

Masahide TAKEBE,  Kazuki NAKAMURA,  Chandra Paul Narayan,  Koichi IIYAMA,  Saburo TAKAMIYA,  

[Date]2003/6/6
[Paper #]ED2003-50
Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Al_2O_3/Si_3N_4 Gate Insulator

Narihiko MAEDA,  Takehiko TAWARA,  Tadashi SAITO,  Kotaro TSUNBAKI,  Naoki KOBAYASHI,  

[Date]2003/6/6
[Paper #]ED2003-51
Effects of surface cleaning processes on device performances of GaAs FETs

Akiyoshi Kudo,  Toshiaki Kitano,  Hirofumi Nakano,  Tetsuo Shiba,  

[Date]2003/6/6
[Paper #]ED2003-52
Plasma Induced Fluorine Damage to P-HEMT and the Influence of Thermal Annealing

Hiroyuki UCHIYAMA,  Takafumi TANIGUCHI,  

[Date]2003/6/6
[Paper #]ED2003-53
Correlation between thermal stability of AlGaN/GaN 2DEG structures and HEMT performances

Kenji SHIOJIMA,  Naoteru SHIGEKAWA,  

[Date]2003/6/6
[Paper #]ED2003-54
Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors

Shigemitsu MARUNO,  Takahiro NAKAMOTO,  Naohito YOSHIDA,  Yuji ABE,  Tatsuo OZEKI,  

[Date]2003/6/6
[Paper #]ED2003-55
Selective MBE Growth of Hexagonal Nano-wire Networks on GaAs Patterned Substrates

Taketomo SATO,  Isao TAMAI,  Souichi YOSHIDA,  Hideki HASEGAWA,  

[Date]2003/6/6
[Paper #]ED2003-56
Passivation of GaAs (001) Surfaces by Forming Si and GaN Interface Control Layers on Ga-rich (4×6) Surface

Sanguan ANANTATHANASARN,  Noboru NEGORO,  Hideki HASEGAWA,  

[Date]2003/6/6
[Paper #]ED2003-57
奥付

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[Date]2003/6/6
[Paper #]
複写される方へ

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[Date]2003/6/6
[Paper #]