Electronics-Electron Devices(Date:2003/01/09)

Presentation
表紙

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[Date]2003/1/9
[Paper #]
目次

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[Date]2003/1/9
[Paper #]
Development of InP/InGaAs Single-Heterojunction Bipolar Transistor with High Uniformity and High Reliability

Takeshi KAWASAKI,  Ryuji YAMABI,  Kenji KOTANI,  Masaki YANAGISAWA,  Seiji YAEGASSI,  Hiroshi YANO,  

[Date]2003/1/9
[Paper #]ED2002-255,MW2002-142
Fabrication Technology for Ultrahigh-Speed Decananometer-Gate InP-Based HEMTs

Akira ENDOH,  Yoshimi YAMASHITA,  Keisuke SHINOHARA,  Kohki HIKOSAKA,  Toshiaki MATSUI,  Satoshi HIYAMIZU,  Takashi MIMURA,  

[Date]2003/1/9
[Paper #]ED2002-256,MW2002-143
Ultra high-speed digital ICs using InP HEMTs

Toshihide SUZUKI,  Yasuhiro NAKASHA,  Hideki KANO,  Ken SAWADA,  Kozo MAKIYAMA,  Tsuyoshi TAKAHASHI,  Masahiro NISHI,  Tatsuya HIROSE,  

[Date]2003/1/9
[Paper #]ED2002-257,MW2002-144
100-Gbit/s Logic IC using InP HEMTs

Koichi MURATA,  Kimikazu SANO,  Hiroto KITABAYASHI,  Suehiro SUGITANI,  Hirohiko SUGAHARA,  Takatomo ENOKI,  

[Date]2003/1/9
[Paper #]ED2002-258,MW2002-145
1.7-W 50-Gbit/s InP HEMT 4:1 Multiplexer IC with a Multi-phase Clock Architecture

Kimikazu Sano,  Koichi Murata,  Suehiro Sugitani,  Hirohiko Sugahara,  Takatomo Enoki,  

[Date]2003/1/9
[Paper #]ED2002-259,MW2002-146
Double-recessed O.1-μm-gate InP-HEMTs for 40-Gb/s Optical Communication Systems

Shinichi HOSHI,  Hironobu MORIGUCHI,  Masanori ITOH,  Tomoyuki OHSHIMA,  Masanori TSUNOTANI,  Toshihiko ICHIOKA,  

[Date]2003/1/9
[Paper #]ED2002-260,MW2002-147
Monolithically Integrated Photoreceiver with Optical Waveguide for 100-Gbit/s Class OEIC

Tomoyuki AKEYOSHI,  Kiyomitsu ONODERA,  Atsushi ARATAKE,  Shinji AOYAMA,  Takao ISHII,  Masami TOKUMITSU,  

[Date]2003/1/9
[Paper #]ED2002-261,MW2002-148
Flip-chip Distributed Amplifier with a bandwidth of 110 GHz

Satoshi MASUDA,  

[Date]2003/1/9
[Paper #]ED2002-262,MW2002-149
1.4-THz Gain-Bandwidth Product Preamplifier IC

Masaru SATO,  Hisao SHIGEMATSU,  Yusuke INOUE,  Tatsuya HIROSE,  

[Date]2003/1/9
[Paper #]ED2002-263,MW2002-150
A 60W AlGaN/GaN Heterojunction with a Field-Modulating Plate

Yasijoro OKAMOTO,  Yuji ANDO,  Takashi INOUE,  Tatsuo NAKAYAMA,  Hironobu MIYAMOTO,  Masaaki KUZUHARA,  

[Date]2003/1/9
[Paper #]ED2002-264,MW2002-151
Ka-band 2.3W Power AlGaN/GaN Heterojunction FET

Takashi INOUE,  Kensuke KASAHARA,  Hironobu MIYAMOTO,  Yuhji ANDO,  Yasuhiro OKAMOTO,  Tatsuo NAKAYAMA,  Masaaki KUZUHARA,  

[Date]2003/1/9
[Paper #]ED2002-265,MW2002-152
Power Amplifier Module with Digital Adaptive Predistortion for Cellular Phone.

S. Kusunoki,  K. Yamamoto,  T. Hatsugai,  K. Tagami,  N. Tominaga,  K. Osawa,  K. Tanabe,  S. Sakurai,  T. Iida,  

[Date]2003/1/9
[Paper #]ED2002-266,MW2002-153
A GSM//EDGE Dual-Mode, 900/1800/1900-MHz Triple-Band HBT-MMIC Power Amplifier Module

Kazuya YAMAMOTO,  Tomoyuki ASADA,  Satoshi SUZUKI,  Takeshi MIURA,  Akira INOUE,  Shinichi MIYAKUNI,  Jun OTSUJI,  Ryo HATTORI,  Yukio MIYAZAKI,  Teruyuki SHIMURA,  

[Date]2003/1/9
[Paper #]ED2002-267,MW2002-154
1.1W/mm High Power GaAs/InGaP Composite Channel FET with Asymmetrical LDD structure at 26V Operation

Ken Nakata,  Ryuji Masuyama,  Shigeru Nakajima,  

[Date]2003/1/9
[Paper #]ED2002-268,MW2002-155
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[Date]2003/1/9
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[Date]2003/1/9
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