Electronics-Electron Devices(Date:2002/10/04)

Presentation
表紙

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[Date]2002/10/4
[Paper #]
目次

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[Date]2002/10/4
[Paper #]
The effect of Tl content on epitaxial thickness of TlGaAs grown by low-temperature molecular beam epitaxy

Nobuhiro KOBAYASHI,  Naoki NISHIMOTO,  Yasutomo KAJIKAWA,  Yoshikazu OHTANI,  Yasuyuki KITANO,  

[Date]2002/10/4
[Paper #]ED2002-215
Growth of HEMT Structure with InAlP Carrier Supply Layer

Haruki YOKOYAMA,  Hiroki SUGIYAMA,  Yasuhiro ODA,  Takashi KOBAYASHI,  

[Date]2002/10/4
[Paper #]ED2002-216
Suppression of Drain Conductance in InP-based HEMTs by Eliminating Hole Accumulation

Tomoyuki ARAI,  Ken SAWADA,  Naoya OKAMOTO,  Kozo MAKIYAMA,  Tsuyoshi TAKAHASHI,  Naoki HARA,  

[Date]2002/10/4
[Paper #]ED2002-217
Evaluation of electrical characteristics of InAlAs/InGaAs metamorphic HEMTs

Kenji Kawada,  Yutaka Ohno,  Shigeru Kishimoto,  Kouichi Maezawa,  Takashi Mizutani,  Misao Takakusaki,  Hirofumi Nakata,  

[Date]2002/10/4
[Paper #]ED2002-218
Comparison between GaInAsN and GaAsSbN using first-principles method

Toshiyuki TAKIZAWA,  James S. Harris,  

[Date]2002/10/4
[Paper #]ED2002-219
Application of an electrochemical method with aqueous KOH solutions for fabrication of 6H-SiC patterned structures

Masashi KATO,  Masaya ICHIMURA,  Eisuke ARAI,  

[Date]2002/10/4
[Paper #]ED2002-220
[OTHERS]

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[Date]2002/10/4
[Paper #]