Electronics-Electron Devices(Date:2002/06/25)

Presentation
COVER

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[Date]2002/6/25
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CONTENTS

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[Date]2002/6/25
[Paper #]
Analysis of characteristics of PHEMT's fabricated by gate recess methods

Seong Dae Lee,  Dan An,  Hyung Moo Park,  Hyun Chang Park,  Sam Dong Kim,  Jin Koo Rhee,  

[Date]2002/6/25
[Paper #]ED2002-157
GaAs PHEMT/HBT High Power Amplifiers for Mobile Communication Terminals

Kazutomi Mori,  Shintaro Shinjo,  

[Date]2002/6/25
[Paper #]ED2002-158
Device Technologies for 40-Gbit/s InP HBT ICs

Kenji KURISHIMA,  Minoru IDA,  Noriyuki WATANABE,  Kiyoshi ISHII,  Hideyuki NOSAKA,  Shoji YAMAHATA,  

[Date]2002/6/25
[Paper #]ED2002-159
Properties and Control of Surfaces of GaN and Related Materials

Hideki HASEGAWA,  Tamotsu HASHIZUME,  

[Date]2002/6/25
[Paper #]ED2002-160
A FULLY-INTEGRATED BROADBAND AMPLIFIER MMIC EMPLOYING A NOVEL CHIP SIZE PACKAGE

Masaaki NISHIJIMA,  Young YUN,  Motonari KATSUNO,  Hidetoshi ISHIDA,  Katsuya MINAGAWA,  Toshihide NOBUSADA,  Tsuyoshi TANAKA,  

[Date]2002/6/25
[Paper #]ED2002-161
S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate

H. Z. Liu,  Y. H. Wang,  C. C. Hsu,  C. H. Chang,  W. Wu,  C. L. Wu,  C. S. Chang,  

[Date]2002/6/25
[Paper #]ED2002-162
K-band p-HEMT-based MMIC VCO using a miniaturized hairpin resonator and a three-terminal p-HEMT varactor with low phase noise and high output power properties

Cheol-Gyu Hwang,  Jeong-Seon Lee,  Jong-In Song,  

[Date]2002/6/25
[Paper #]ED2002-163
Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate

S. ARULKUMARAN,  T. EGAWA,  H. ISHIKAWA,  T. JIMBO,  

[Date]2002/6/25
[Paper #]ED2002-164
Analytic Model for the Gate Current of MODFET's with and without Photonic Control

Hwe-Jong KIM,  Dong Myong KIM,  Ilki HAN,  Won-June CHOI,  Jacques ZIMMERMANN,  Jungil LEE,  

[Date]2002/6/25
[Paper #]ED2002-165
Spontaneous and Piezoelectric Polarization Charge Effects on Contact Resistance in AlGaN/GaN HEMT Structures

Mayumi HIROSE,  Kunio TSUDA,  

[Date]2002/6/25
[Paper #]ED2002-166
Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices

Il ki HAN,  Won Jun CHOI,  Jean Brini,  Alain Chovet,  Jungil Lee,  

[Date]2002/6/25
[Paper #]ED2002-167
Effect of oxidation and/or Nitridation of (100) n-GaAs Surface

N. C. Paul,  D. Tezuka,  T. Inokuma,  K. Iiyama,  S. Takamiya,  

[Date]2002/6/25
[Paper #]ED2002-168
Electrical properties and thermally stability of Au/W/Ti ohmic contacts to (NH_4)_2S treated n-GaAs

Jian ZHOU,  Guanqun XIA,  Binhan LI,  Wenchao LIU,  

[Date]2002/6/25
[Paper #]ED2002-169
Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy

Tengfeng XIE,  Kei-ichiro KUMADA,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  

[Date]2002/6/25
[Paper #]ED2002-170
Strong radiation hardness of Eu-related luminescence from GaN : Eu and application for optoelectronics in radiation environments

Akihiro WAKAHARA,  Yasuo NAKANISHI,  Kazuyuki MOTOKAWA,  Hiroshi OKADA,  Akira YOSHIDA,  Takeshi OHSHIMA,  Hisayoshi ITOH,  

[Date]2002/6/25
[Paper #]ED2002-171
奥付

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[Date]2002/6/25
[Paper #]