Electronics-Electron Devices(Date:2002/06/07)

Presentation
表紙

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[Date]2002/6/7
[Paper #]
目次

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[Date]2002/6/7
[Paper #]
Growth of transition-metal added GaN and room temperature ferromagnetism

Yi-Kai ZHOU,  Masahiko HASHIMOTO,  Masahito KANAMURA,  Ryo ASANO,  Hajime ASAHI,  

[Date]2002/6/7
[Paper #]ED2002-73
Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor

Sakuntam SANORPIM,  Fumihiro Nakajima,  Shigeyuki IMURA,  Eriko TAKUMA,  Ryuji KATAYAMA,  Kentaro ONABE,  Hideki ICHINOSE,  Yasuhiro SHIRAKI,  

[Date]2002/6/7
[Paper #]ED2002-74
Luminescence dynamics of InGaN single quantum well by time-resolve near-field spectroscopy

Akio KANETA,  Giichi MARUTSUKI,  Yukio NARUKAWA,  Takashi MUKAI,  Yoichi KAWAKAMI,  Shigeo FUJITA,  

[Date]2002/6/7
[Paper #]ED2002-75
Time and Spatial Resolved Observation of the Photothermal Processes for the Low Dislocated GaN

Koichi OKAMOTO,  Kenichi INOUE,  Yoichi KAWAKAMI,  Shigeo FUJITA,  Jungkwoun CHOI,  Masahide TERAZIMA,  Ayumu TSUJIMURA,  Isao KIDOGUCHI,  

[Date]2002/6/7
[Paper #]ED2002-76
Time-resolved Electroluminescence Study of Green Light-emitting Diode

Takamasa KURODA,  Tomohito YABUSHITA,  Atsushi TACKEUCHI,  Naochika HORIO,  Kazuyoshi TANIGUCHI,  Youji YAMASHITA,  Takako CHINONE,  Chihiro FUNAOKA,  

[Date]2002/6/7
[Paper #]ED2002-77
Threading Dislocations in GaN and GaInN

Takao MIYAJIMA,  Tomonori HINO,  Shigetaka TOMIYA,  Katsunori YANASHIMA,  Tsunenori ASATSUMA,  Toshimasa KOBYASHI,  Masao IKEDA,  

[Date]2002/6/7
[Paper #]ED2002-78
Comparison of Emission Properties between Cubic and Hexagonal InGaN : Effects of Polarization Field and Exciton Localization

Shigefusa F. CHICHIBU,  Tsunemasa KURODA,  Takeyoshi ONUMA,  Toshio KITAMURA,  Takayuki SOTA,  Atsushi TACKEUCHI,  Steven P. DENBAARS,  Shuji NAKAMURA,  Hajime OKUMURA,  

[Date]2002/6/7
[Paper #]ED2002-79
Optical-Biased Electroreflectance of Cubic GaN/GaAs(001) Heterostrucutures

Ryuji KATAYAMA,  Masayuki KURODA,  Kentaro ONABE,  Yasuhiro SHIRAKI,  

[Date]2002/6/7
[Paper #]ED2002-80
Low-temperature activation of p-type GaN and its mechanism

Ichitaro WAKI,  Hiroshi FUJIOKA,  Masaharu OSHIMA,  Hisayuki MIKI,  Mineo OKUYAMA,  

[Date]2002/6/7
[Paper #]ED2002-81
Formation of low-resistance Ohmic contact to p-GaN using strained InGaN contact layer

Kazuhide KUMAKURA,  Toshiki MAKIMOTO,  Naoki KOBAYASHI,  

[Date]2002/6/7
[Paper #]ED2002-82
Growth of GaN-HEMT epi-wafer by mass-production type MOVPE system

Kazuto Takano,  Hajime Fujikura,  Kazuyuki Iizuka,  

[Date]2002/6/7
[Paper #]ED2002-83
Temperature Distribution Measurement in GaN HEMTs by Micro-Raman Scattering Spectroscopy

Yutaka OHNO,  Shigeru KISHIMOTO,  Koichi MAEZAWA,  Takashi MIZUTANI,  

[Date]2002/6/7
[Paper #]ED2002-84
Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs

Takashi MIZUTANI,  Mitsutoshi AKITA,  Yutaka OHNO,  Shigeru KISHIMOTO,  Koichi MAEZAWA,  

[Date]2002/6/7
[Paper #]ED2002-85
Characterization of AlGaN/GaN hetero-structures on 4H-SiC substrates and application to electronic devices

Hiroyasu ISHIKAWA,  Satoshi ICHIKAWA,  Subramaniam ARULKUMARAN,  Baijun ZHANG,  Takashi EGAWA,  Takashi JIMBO,  

[Date]2002/6/7
[Paper #]
Characterization of GaN and AlGaN Surfaces and Their Insulated Gate Structures

Tamotsu Hashizume,  Shinya Ootomo,  

[Date]2002/6/7
[Paper #]ED2002-87
AlGaN/GaN power HFET for a large current operation

Seikoh YOSHIDA,  Hirotatsu ISHII,  Jiang LI,  Delian WANG,  Masakazu ICHIKAWA,  

[Date]2002/6/7
[Paper #]ED2002-88
Electron Transport Properties in High-Biased AlGaN/GaN HEMTs

Naoteru Shigekawa,  Kenji Shiojima,  

[Date]2002/6/7
[Paper #]ED2002-89
Device Miniaturization Limit and GaN Based Transistors

Yasuo OHNO,  Jin-Ping AO,  

[Date]2002/6/7
[Paper #]ED2002-90
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