Electronics-Electron Devices(Date:2002/06/06)

Presentation
表紙

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[Date]2002/6/6
[Paper #]
目次

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[Date]2002/6/6
[Paper #]
Recent Progress of Crystal Growth Technology for GaN Substrate

Akira USUI,  Haruo SUNAKAWA,  Atsushi A. YAMAGUCHI,  Kenji KOBAYASHI,  

[Date]2002/6/6
[Paper #]ED2002-44
Epitaxial Growth of GaN on NGO Substrates by HVPE Method : Development of GaN substrates for Fabrication of Laser Diodes

Masashi NAKAMURA,  Shinichi SASAKI,  Eiichi SIMIZU,  Tadaaki ASAHI,  Kenji SATO,  Ryota TANAKA,  Hitoshi IMAI,  Akihiro WAKAHARA,  Akira YOSIDA,  

[Date]2002/6/6
[Paper #]ED2002-45
Study on Stress Distributions in Air-Bridged Lateral Epitaxial Grown GaN with Low Dislocation Density

Akihiko ISHIBASHI,  Gaku SUGAHARA,  Yasutoshi KAWAGUCHI,  Toshiya YOKOGAWA,  

[Date]2002/6/6
[Paper #]ED2002-46
Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system

Randolph FLAUTA,  Toshiro KASUYA,  Tadashi OHACHI,  Motoi WADA,  

[Date]2002/6/6
[Paper #]ED2002-47
Preparation of ZrB_2 single crystals and the substrates

Shigeki OTANI,  

[Date]2002/6/6
[Paper #]ED2002-48
Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE

Masayuki TORIKAI,  Tomonobu KATO,  Yoshio HONDA,  Masahito YAMAGUCHI,  Nobuhiko SAWAKI,  

[Date]2002/6/6
[Paper #]ED2002-49
Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate

Tetsuo NARITA,  Tomonobu KATO,  Yoshio HONDA,  Masahito YAMAGUCHI,  Nobuhiko SAWAKI,  

[Date]2002/6/6
[Paper #]ED2002-50
Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer

Bablu K. GHOSH,  Toru TANIKAWA,  Akihiro HASHIMOTO,  Akio YAMAMOTO,  Yoshifumi ITO,  

[Date]2002/6/6
[Paper #]ED2002-51
Growth of InGaN based LED on AlN/Sapphire templates

Hiroyoshi OHMURA,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  Takashi JIMBO,  Kanji MASUI,  

[Date]2002/6/6
[Paper #]ED2002-52
Epitaxial Growth of III-Nitrides with Low Dislocations

H. Miyake,  R. Takeuchi,  K. Hiramatsu,  H. Naoi,  Y. Iyechika,  T. Maeda,  T. Riemann,  F. Bertram,  J. Christen,  

[Date]2002/6/6
[Paper #]ED2002-53
High Quality GaN Grown by Raised-Pressure HVPE

Shinya BOHYAMA,  Kenji YOSHIKAWA,  Hiroyuki NAOI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Yasushi IYECHIKA,  Takayosi MAEDA,  

[Date]2002/6/6
[Paper #]ED2002-54
Growth and properties of AlInN, AlN and related structures

Shugo NITTA,  Yasuhiro WATANABE,  Yoshihito TOMIDA,  Satoshi KAMIYAMA,  Hiroshi AMANO,  Isamu AKASAKI,  Shigeo YAMAGUCHI,  Yasuo IWAMURA,  

[Date]2002/6/6
[Paper #]ED2002-55
Growth Pressure Dependence of the Crystallinity of MOCVD Grown GaN Thin Films

S-W. Kim,  T. Shibata,  T. Sugimoto,  T. Yamada,  K. Haga,  T. Suzuki,  

[Date]2002/6/6
[Paper #]ED2002-56
The Heating Effect of the Ammonia Injector for the Growth of GaN Thin Films by Ammonia-MBE

T. Shibata,  S-W. Kim,  M. Akatu,  T. Yamada,  K. Haga,  T. Suzuki,  

[Date]2002/6/6
[Paper #]ED2002-57
Influence of Ambient Hydrogen in InGaN multiple quantum well structure

Akinori Ubukata,  Hiroki Tokunaga,  Yoshiki Yano,  Akira Yamaguchi,  Toshiaki Yamazaki,  

[Date]2002/6/6
[Paper #]ED2002-58
Control of n-type conduction for Si-doped AlN and AlGaN with high Al content

Yoshitaka TANIYASU,  Makoto KASU,  Naoki KOBAYASHI,  

[Date]2002/6/6
[Paper #]ED2002-59
Fabrication of GaN Films by CS-MBE and Its Application to Light-Emitting Devices

Tohru HONDA,  Kenichi IGA,  Hideo KAWANISHI,  

[Date]2002/6/6
[Paper #]ED2002-60
Growth and Optical Properties of GaAsN Alloys Grown by RF-MBE

Atsushi NISHIKAWA,  Ryuji KATAYAMA,  Kentaro ONABE,  Yasuhiro SHIRAKI,  

[Date]2002/6/6
[Paper #]ED2002-61
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