Electronics-Electron Devices(Date:2002/05/17)

Presentation
表紙

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[Date]2002/5/17
[Paper #]
目次

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[Date]2002/5/17
[Paper #]
Growth and electronic properties of thick CdTe layers on GaAs by MOVPE

Yasuhiro Kawauchi,  Tomoaki Ishiguro,  Hiroshi Morishita,  Takashi Mabuchi,  Yasunori Agata,  Madan Niraula,  Kazuhito Yasuda,  

[Date]2002/5/17
[Paper #]ED2002-28
Growth and electronic properties of thick CdTe layers on GaAs/Si by MOVPE

Hiroshi Morishita,  Tomoaki Ishiguro,  Yasuhiro Kawauchi,  Takashi Mabuchi,  Yasunori Agata,  Madan Niraula,  Kazuhito Yasuda,  

[Date]2002/5/17
[Paper #]ED2002-29
Low temperature growth of InGaAs layers on GaAs substrates by metalorganic chemical vapor deposition

H Iwahori,  K Kobayashi,  N Kuroyanagi,  K Kuwahara,  S Fuke,  Y Takano,  

[Date]2002/5/17
[Paper #]ED2002-30
Low-temperature MBE growth and optical properties of Er-doped GaAs

Hidenobu MAKI,  Takahiro SONOYAMA,  Kazuo OGAWA,  Masao TABUCHI,  Yosikazu TAKEDA,  

[Date]2002/5/17
[Paper #]ED2002-31
Fabrication of InAs quantum dots by droplet epitaxy on InGaAsP lattice-matched with InP substrate

Ryo OGA,  Woo-Sik LEE,  Yasufumi FUJIWARA,  Yoshikazu TAKEDA,  

[Date]2002/5/17
[Paper #]ED2002-32
Characterization of GaAs Solar Cell on Si by epitaxial lift off techniques

N Okada,  H Taguchi,  K Itakura,  T Soga,  T Jimbo,  M Umeno,  

[Date]2002/5/17
[Paper #]ED2002-33
Electroluminescence properties of Er,O-codoped GaAs/GaInP grown by OMVPE

Atsushi KOIZUMI,  Yasufumi FUJIWARA,  Kentaro INOUE,  Taketoshi YOSHIKANE,  Yoshikazu TAKEDA,  

[Date]2002/5/17
[Paper #]ED2002-34
C-doped GaAsSb grown by MOCVD with CBr_4

Yasuhiro ODA,  Noriyuki WATANABE,  Takashi KOBAYASHI,  

[Date]2002/5/17
[Paper #]ED2002-35
Investigation of Sputtering Gases on IBS Growth of Si and Ge

Takaharu Ikeda,  Haruhiko Konta,  Makoto Sugino,  Kimihiro Sasaki,  Tomonobu Hata,  

[Date]2002/5/17
[Paper #]ED2002-36
The effects of low temperature growth and IBAD on C incorporation into GeC epilayers on Si(001)substrates

M OKINAKA,  K MIYATAKE,  Y HAMANA,  T TOKUDA,  J OHTA,  M NUNOSHITA,  

[Date]2002/5/17
[Paper #]ED2002-37
SiGe HBT by HCl-free selective epitaxial growth

Yukihiro Kiyota,  Tsutomu Udo,  Takashi Hashimoto,  Akihiro Kodama,  Hiromi Shimamoto,  Reiko Hayami,  Katsuyoshi Washio,  

[Date]2002/5/17
[Paper #]ED2002-38
Electron Emission from Inorganic and Organic Ferro-electric Substance by Polarization Inversion

Shinji OGAWA,  Hidenori NAKAMURA,  Shinzo MORITA,  

[Date]2002/5/17
[Paper #]ED2002-39
Interface recombination velocity measurements for SOI wafers by μ-PCD with electric field

Toshio Kuwayama,  Masaya Ichimura,  Eisuke Arai,  

[Date]2002/5/17
[Paper #]ED2002-40
Investigation of electron irradiation induced defects in single crystal CuInSe_2 thin films

Naoki FUJITA,  Lee HAE-SEOK,  Hiroshi OKADA,  Akihiro WAKAHARA,  Akira YOSHIDA,  Takeshi OHSHIMA,  Hisayoshi ITOH,  

[Date]2002/5/17
[Paper #]ED2002-41
Deposition and characterization of SnS thin film by electrochemical deposition method with pulse voltage conditions

Naoya Sato,  Masaya Ichimura,  Eisuke Arai,  Yoshihisa Yamazaki,  

[Date]2002/5/17
[Paper #]ED2002-42
Formation and characterization of ZnS thin films by photochemical deposition method

Ryohei Kobayashi,  Naoya Sato,  Masaya Ichimura,  Eisuke Arai,  

[Date]2002/5/17
[Paper #]ED2002-43
[OTHERS]

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[Date]2002/5/17
[Paper #]