Electronics-Electron Devices(Date:2002/01/22)

Presentation
表紙

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[Date]2002/1/22
[Paper #]
目次

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[Date]2002/1/22
[Paper #]
AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip

Chikashi Maeda,  Norihito Ozeki,  Shigeru Kishimoto,  Takashi Mizutani,  Toshiki Sugai,  Hisanori Shinohara,  

[Date]2002/1/22
[Paper #]2001-ED-232,2001-SDM-235
The characterization of ultrathin Si deposited on Ga stabilized GaAs (001) surface by STM

Noboru NEGORO,  Yuuta NAKANO,  Hideki HASEGAWA,  

[Date]2002/1/22
[Paper #]2001-ED-233,2001-SDM-236
Proposal of a New Experiment for Observation of Electron Wave Diffraction by BEEM

Nobuya MACHIDA,  Kazuhito FURUYA,  Masatoshi FUKASAWA,  Kenichi MAE,  Tomohiko HIRATA,  Daigo MIYAMOTO,  

[Date]2002/1/22
[Paper #]2001-ED-234,2001-SDM-237
GaN dry etching process for quantum nanostructure formation

Zhi Jin,  Makoto Endo,  Tamotsu Hashizume,  Seiya Kasai,  Hideki Hasegawa,  

[Date]2002/1/22
[Paper #]2001-ED-235,2001-SDM-238
Polarization Field and Electronic States in GaN-based Quantum Dot Structures

Toshio SAITO,  Yasuhiko ARAKAWA,  

[Date]2002/1/22
[Paper #]2001-ED-236,2001-SDM-239
Superconductivity by proximity effect in arrays of single-walled carbon nanotubes with large diameter and thick shell

K. TAKAZAWA,  H. KIRIYAMA,  S. ISHIDA,  I. TAKESUE,  J. HARUYAMA,  M.Marcus C,  

[Date]2002/1/22
[Paper #]2001-ED-237,2001-SDM-240
Photon-Assisted Tunneling in Quantum Well Structures and Its Application to Terahertz Devices

Masahiro ASADA,  

[Date]2002/1/22
[Paper #]2001-ED-238,2001-SDM-241
Room Temperature Coulomb Brockade Characteristics of Position Controlled Grown Carbon Nanotube

Seizo Kinoshita,  Kazuhiko Matsumoto,  Kousuke Kurachi,  Yoshitaka Gotoh,  Toshio Nemoto,  

[Date]2002/1/22
[Paper #]2001-ED-239,2001-SDM-242
Formation of InGaAs Ridge Quantum Wire Network Structures Grown by Selective MBE and Its Device Application

T. Muranaka,  A. Ito,  C. Jiang,  H. Hasegawa,  

[Date]2002/1/22
[Paper #]2001-ED-240,2001-SDM-243
The formation of resonance tunnel device by Al_2O_3/Si multiple structure

M. Ishida,  Y. Koji,  N. Takahashi,  R. Ito,  K. Sawada,  

[Date]2002/1/22
[Paper #]2001-ED-241,2001-SDM-244
CdF_2/CaF_2 Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy

Masahiro WATANABE,  Tatsuya ISHIKAWA,  Masaki Matsuda,  Tohru Kanazawa,  Masahiro ASADA,  

[Date]2002/1/22
[Paper #]2001-ED-242,2001-SDM-245
Si_<1-x>Ge_x/Si Triple Barrier Resonant Tunneling Diode with a High Peak-to-Valley Ratio at Room Temperature

Yoshiyuki SUDA,  Akihiko MEGURO,  Hirotaka MAEKAWA,  

[Date]2002/1/22
[Paper #]2001-ED-243,2001-SDM-245
Optimization of Characteristics of In_<0.8>Ga_<0.2>As/AlAs RTD Grown by Metal Organic Chemical Vapor Deposition

Hideaki MATSUZAKI,  Hiroki SUGIYAMA,  Jiro OSAKA,  Takashi KOABAYASHI,  Takatomo ENOKI,  

[Date]2002/1/22
[Paper #]2001-ED-244,2001-SDM-247
[OTHERS]

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[Date]2002/1/22
[Paper #]