Electronics-Electron Devices(Date:2002/01/21)

Presentation
表紙

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[Date]2002/1/21
[Paper #]
目次

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[Date]2002/1/21
[Paper #]
Fabrtcation of Quantum Nanostructures by Selective Area MOVPE and Their Device Application : Fabrication of Quantum Nanostructures and Their Device Application

Junichi MOTOHISA,  Fumito NAKAJIMA,  Masashi AKABORI,  Takashi FUKUI,  

[Date]2002/1/21
[Paper #]2001-ED-224,2001-ED-227
The Kondo Effect in Semiconductor Quantum Dots

Satoshi Sasaki,  Seigo Tarucha,  

[Date]2002/1/21
[Paper #]2001-ED-225,2001-SDM-228
Fabrication of GaAs/AlGaAs Quantum Wires and Quantum Network Structures using MBE selective growth

Isao TAMAI,  Taketomo SATO,  Hideki HASEGAWA,  

[Date]2002/1/21
[Paper #]2001-ED-226,2001-SDM-229
Coulomb Drag in Coupled Quantum Wires

Michihisa Yamamoto,  Yoshiro Hirayama,  Yasuhiro Tokura,  Keiji Ono,  Seigo Tarucha,  

[Date]2002/1/21
[Paper #]2001-ED-227,2001-SDM-230
Fabrication of InGaAs quantum dots formation along GaAs multiatomic steps

T. Ishihara,  M. Akabori,  J. Motohisa,  T. Fukui,  

[Date]2002/1/21
[Paper #]2001-ED-228,2001-SDM-231
Structure and Photoexcited Carrier Dynamics in InGaAs/InP Multiple Quantum Wells

I. YAMAKAWA,  M. SHIOZAWA,  Y. WAKUI,  K. TANASE,  R. OHGA,  A. NAKAMURA,  Y. HAMANAKA,  Y. FUJIWARA,  Y. TAKEDA,  

[Date]2002/1/21
[Paper #]2001-ED-229,2001-SDM-232
Correlation between electrons and holes in InAs/GaSb heterostructures

Kyoichi SUZUKI,  Sen MIYASHITA,  Yoshiro HIRAYAMA,  

[Date]2002/1/21
[Paper #]2001-ED-230,2001-SDM-233
Fabrication of porous InP structure by Electrochemical Process and itsApplication

Tetsuro HIRANO,  Taketomo SATO,  Hideki HASEGAWA,  

[Date]2002/1/21
[Paper #]2001-ED-231,2001-ED-234
[OTHERS]

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[Date]2002/1/21
[Paper #]