Electronics-Electron Devices(Date:2002/01/09)

Presentation
表紙

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[Date]2002/1/9
[Paper #]
目次

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[Date]2002/1/9
[Paper #]
AlGaN/GaN HEMTの高周波特性

Y. Sano,  K. Kaifu,  J. Mita,  T. Yamada,  T. Makita,  H. Ishikawa,  T. Egawa,  T. Jimbo,  

[Date]2002/1/9
[Paper #]2001-ED-184,2001-MW-139,2001-ICD-181
110 W AlGaN/Gan Heterojunction FET on Thinned Sapphire

Yuji ANDO,  Yasuhiro OKAMOTO,  Hironobu MIYAMOTO,  Tasuo NAKAYAMA,  Kensuke KASAHARA,  Masaaki KUZUHARA,  

[Date]2002/1/9
[Paper #]2001-ED-185,2001-MW-140,2001-ICD-182
Novel AlGaN/GaN Mos HFETs with Thermally Grown Gate Oxide

Y. Ikeda,  K. Inoue,  H. Masato,  T. Matsuno,  K. Nishii,  

[Date]2002/1/9
[Paper #]2001-ED-186,2001-MW-141,2001-ICD-183
Current Collapse in GaN HEMTs

Yutaka OHNO,  Shigeru KISHIMOTO,  Koichi MAEZAWA,  Takashi MIZUTANI,  

[Date]2002/1/9
[Paper #]187-ED-2001,2001-MW-142,2001-ICD-184
InGaP Channel Field-Modulating Plate FET under High Voltage Operation

Akio Wakejima,  Kazuki Ota,  Kohji Matsunaga,  Masaaki Kuzuhara,  

[Date]2002/1/9
[Paper #]2001-ED-188,2001-MW-143,2001-ICD-185
A Distributed Amplifier for 40Gb/s Optical Transmission Systems

Yasunori OGAWA,  Makoto KOSUGI,  Masanori TSUNOTANI,  Shohei SEKI,  Tamotsu KIMURA,  

[Date]2002/1/9
[Paper #]2001-ED-189,2001-MW-144,2001-ICD-186
Uniform InP-based HEMTs and Application for 40-Gbit/s Optical Communication Circuits

Tsuyoshi TAKAHSHI,  Kozo MAKIYAMA,  Kenji IMANISHI,  Masahiro NISHI,  Hisao SHIGEMATSU,  Toshihide SUZUKI,  Naoki HARA,  

[Date]2002/1/9
[Paper #]2001-ED-190,2001-MW-145,2001-ICD-187
Surface Mount Technology for Over-40-Gb/s ICs

Hirohiko SUGAHARA,  Shunji KIMURA,  Koichi MURATA,  Hiroyuki TOMIYAMA,  Eiichi SANO,  

[Date]2002/1/9
[Paper #]2001-ED-191,2001-MW-146,2001-ICD-188
Undoped-Emitter InP/InGaAs HBTs and Their Circuit Applications

Minoru Ida,  Kenji Kurishima,  Kiyoshi Ishii,  Eiichi Sano,  Hideyuki Nosaka,  Noriyuki Watanabe,  Takatomo Enoki,  

[Date]2002/1/9
[Paper #]2001-ED-192,2001-MW-147,2001-ICD-189
Device Technologies for High-Performance InP DHBTs

Kenji KURISHIMA,  Minoru IDA,  Noriyuki WATANABE,  Kiyoshi ISHII,  Takatomo ENOKI,  Eiich SANO,  

[Date]2002/1/9
[Paper #]2001-ED-193,2001-MW-148,2001-ICD-190
High-Speed InP/InGaAs DHBTs with Improved Collector Transport

A. Fujihara,  Y. Ikenage,  H. Takahashi,  M. Kawanaka,  S. Tanaka,  

[Date]2002/1/9
[Paper #]2001-ED-194,2001-MW-149,2001-ICD-191
Effect of Gate-Recess Structure on the High Frequency Performance of Ultra-Fast InP-Based HEMTs : Asymmetric Gate-Recess Fabrication and Characterization

Keisuke SHINOHARA,  Toshiaki MATSUI,  Yoshimi YAMASHITA,  Akira ENDOH,  Kohki HIKOSAKA,  Takashi MIMURA,  Satoshi HIYAMIZU,  

[Date]2002/1/9
[Paper #]2001-ED-195,2001-MW-150,2001-ICD-192
Analysis of Relationship between Gate-Lag and Breakdown Phenomena in Recessed-Gate GaAs MMSFETs

Y. MITANI,  D. KASAI,  A. WAKABAYASHI,  K. HORIO,  

[Date]2002/1/9
[Paper #]2001-ED-196,2001-MW-151,2001-ICD-193
[OTHERS]

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[Date]2002/1/9
[Paper #]