エレクトロニクス-電子デバイス(開催日：2001/06/30)

タイトル/著者/発表日/資料番号
表紙

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[発表日]2001/6/30
[資料番号]
CONTENTS

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[発表日]2001/6/30
[資料番号]
The InP-HEMT IC Technology for 40-Gbit/s Optical Communications

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[発表日]2001/6/30
[資料番号]ED2001-95, SDM2001-102
AlGaN/GaNヘテロ接合FETのマイクロ波高出力特性

葛原 正明,  羽山 信幸,  安藤 裕二,  国弘 和明,  笠原 健資,  岡本 康宏,  松永 高治,  中山 達峰,  大野 泰夫,  宮本 広信,  

[発表日]2001/6/30
[資料番号]ED2001-96, SDM2001-103
Investigation of Highly Strained InGaP/InGaAs p-HEMT Grown by Using A Reduced Area Growth

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[発表日]2001/6/30
[資料番号]ED2001-97, SDM2001-104
AlGaN/GaN HEMTの高周波特性の温度依存性

水谷 孝,  秋田 光俊,  岸本 茂,  

[発表日]2001/6/30
[資料番号]ED2001-98, SDM2001-105
Low-frequency noise characteristics of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As metamorphic high electron mobility transistors

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[発表日]2001/6/30
[資料番号]ED2001-99, SDM2001-106
Development of a RF Bipolar Transistor in a Standard 0.35μm CMOS Technology

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[発表日]2001/6/30
[資料番号]ED2001-100, SDM2001-107
Development of Si NMOS low-power Tx MMIC chipsets for 5.8 GHz wireless PDA applications

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[発表日]2001/6/30
[資料番号]ED2001-101,SDM2001-108
Performance analyses of GaAs PHEMT for phase difference in millimeter waves

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[発表日]2001/6/30
[資料番号]ED2001-102, SDM2001-109
RESURF LDMOS Technologies for High Voltage Integrated Circuits

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[発表日]2001/6/30
[資料番号]ED2001-103, SDM2001-110
A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices

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[発表日]2001/6/30
[資料番号]ED2001-104, SDM2001-111
High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits

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[発表日]2001/6/30
[資料番号]ED2001-105, SDM2001-112
[OTHERS]

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[発表日]2001/6/30
[資料番号]