Electronics-Electron Devices(Date:2001/05/17)

Presentation
表紙

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[Date]2001/5/17
[Paper #]
目次

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[Date]2001/5/17
[Paper #]
CdTe p-i-n diode by excimer laser doping

K. Asano,  A. Nakamura,  Madan Niraula,  T. Aoki,  Y. Hatanaka,  

[Date]2001/5/17
[Paper #]ED2001-14,CPM2001-1,SDM2001-14
Iodine doping in CdTe layers grown by metalorganic vapor phase epitaxy

Yasumitsu Tomita,  Yusuke Masuda,  Tomoaki Ishiguro,  Yasuhiro Kawauchi,  Kazuki Hoki,  Hiroshi Morishita,  Kazuhito Yasuda,  

[Date]2001/5/17
[Paper #]ED2001-15,CPM2001-2,SDM2001-15
Arsenic doping in CdTe layers grown by metalorganic vapor phase epitaxy

Yusuke Masuda,  Yasumitsu Tomita,  Tomoaki Ishiguro,  Yasuhiro Kawauchi,  Kazuki Hoki,  Hiroshi Morishita,  Kazuhito Yasuda,  

[Date]2001/5/17
[Paper #]ED2001-16,CPM2001-3,SDM2001-16
P-type ZnO Layer Formation by Excimer Laser Doping

Y. Shimizu,  A. Miyake,  T. Aoki,  Y. Nakanishi,  Y. Hatanaka,  

[Date]2001/5/17
[Paper #]ED2001-17,CPM2001-4,SDM2001-17
Study of electron irradiation effect on CuInSe_2 thin films

Hae-Seok Lee,  Yoshi Kaieda,  Naoki Fujita,  Hiroshi Okada,  Akihiro Wakahara,  Akira Yoshida,  

[Date]2001/5/17
[Paper #]ED2001-18,CPM2001-5,SDM2001-18
Formation and Properties of CuInSe_2 Thin Films by Hot-Wall Deposition using CuI

Hitoshi KIKUCHI,  Hiroshi AMOU,  Yoshinori EMA,  Takahiro TAKAHASHI,  

[Date]2001/5/17
[Paper #]ED2001-19,CPM2001-16,SDM2001-19
Durk Current Reduction of InGaAsP/InAlAs Super-lattice Avalanche Photodiod

Asamira Suzuki,  Atsushi Yamada,  Ken Idota,  Hideyuki Tanaka,  Tatsuo Yokotsuka,  

[Date]2001/5/17
[Paper #]ED2001-20,CPM2001-7,SDM2001-20
Reduction of threading dislocation density in metalorganic-chemical-vapor-deposition-grown GaAs layer on Si substrate by In-doping

K. Kobayashi,  T. Kururi,  T. Uranishi,  K. Kuwahara,  S. Fuke,  Y. Takano,  

[Date]2001/5/17
[Paper #]ED2001-21,CPM2001-8,SDM2001-21
Preparation and Properties of AlN/GaN Short-Period superlattices by Hot Wall Epitaxy

H. NASAWA,  T. OSE,  K. ISHINO,  Y. INOUE,  H. FUJIYASU,  A. ISHIDA,  

[Date]2001/5/17
[Paper #]ED2001-22,CPM2001-9,SDM2001-22
Preparation and Properties of PbSnCaTe Films for Long-wavelength Infrared Laser

S. Wang,  T. Ohashi,  K. Ishino,  Y. Inoue,  H. Fujiyasu,  A. Ishida,  

[Date]2001/5/17
[Paper #]ED2001-23,CPM2001-10,SDM2001-23
Construction of Phase Diagram of (Nd_<0.33>Eu_<0.33>Gd_<0.33>)Ba_2Cu_3O_x-Ba_3Cu_<10>O_<13> and Crystallization

T. Murai,  T. Mori,  D. K. Aswal,  M. Kumagawa,  Y. Hayakawa,  

[Date]2001/5/17
[Paper #]ED2001-24,CPM2001-11,SDM2001-24
Organometallic Vapor Phase Epitaxy of GaN on Si using Epitaxial Al_2O_3 Intermediate Layer

A. Wakahara,  N. Kawamura,  H. Oishi,  A. Yoshida,  M. Ishida,  

[Date]2001/5/17
[Paper #]ED2001-25,CPM2001-12,SDM2001-25
Reduction of defect density in GaN layer having buried Ga metal

Y. Kurumasa,  S. Makino,  K. Ohtuka,  K. Kuwahara,  M. Sumiya,  Y. Takano,  S. Fuke,  

[Date]2001/5/17
[Paper #]ED2001-26,CPM2001-13,SDM2001-26
Preparation and evaluation of SrS:Cu films for blue EL elements

Masaaki Isai,  Yoshihiko Kawamura,  Takashi Kasai,  Kenei Ishino,  Hiroshi Fujiyasu,  

[Date]2001/5/17
[Paper #]ED2001-27,CPM2001-14,SDM2001-27
Growth of high quality In_<1-x>Ga_xAs bridge layers with high indium compositions on composition converted InAs substrates

K. Balakrishnan,  S. Iida,  T. Koyama,  M. Kumagawa,  Y. Hayakawa,  

[Date]2001/5/17
[Paper #]ED2001-28,CPM2001-15,SDM2001-28
Experiments of solidification and melting of semiconductor crystal under reduced gravity using drop tower

N. Murakami,  Y. Hayakawa,  K. Balakrishnan,  N. Shibata,  H. Komatsu,  T. Nakamura,  T. Yamada,  T. Koyama,  T. Ozawa,  Y. Okano,  M. Miyazawa,  M. Kumagawa,  

[Date]2001/5/17
[Paper #]ED2001-29,CPM2001-16,SDM2001-29
[OTHERS]

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[Date]2001/5/17
[Paper #]