Electronics-Electron Devices(Date:2001/02/21)

Presentation
表紙

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[Date]2001/2/21
[Paper #]
目次

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[Date]2001/2/21
[Paper #]
Fabrication of c-Si/SiO_2 low dimensional structure using selective epitaxial growth by gas source molecular beam epitaxy

Toru SEGAWA,  Satoru MATSUMOTO,  

[Date]2001/2/21
[Paper #]ED2000-243,SDM2000-197
Fabrication and characterization of periodic multiatomic step structures on patterned vicinal substrates and its applications

Yasuhiro ODA,  Toshifumi HARADA,  Junichi MOTOHISA,  Takashi FUKUI,  

[Date]2001/2/21
[Paper #]ED2000-244,SDM2000-198
Fabrication of InGaAs Ridge Quantum Structures Grown by Selective MBE and their Device Applications

T Muranaka,  A Ito,  C Jiang,  H Hasegawa,  

[Date]2001/2/21
[Paper #]ED2000-245,SDM2000-199
Fabrication of GaN dots array on Si substrate by selective area growth method

Masahito Yamaguchi,  Yoshio Honda,  Nobuhiko Sawaki,  

[Date]2001/2/21
[Paper #]ED2000-246,SDM2000-200
Selective formation of site-controlled metal nanostructures on epitaxial fluoride films

Satoshi Yamada,  Fumihito Hirabayashi,  Kazuo Tsutsui,  

[Date]2001/2/21
[Paper #]ED2000-247,SDM2000-201
The diffusion of impurities into multi-walled carbon nanotuves and spin flipping : Polarized injection of spin flip electron

I Takesue,  T Hasegawa,  J Haruyama,  

[Date]2001/2/21
[Paper #]ED2000-248,SDM2000-202
Characterization of ultrathin insulator / Si interfaces formed on n-Si(001) by UHV contactless capacitance-voltage method

Ryouhei SHOUJI,  Tamotsu HASHIZUME,  Toshiyuki YOSHIDA,  Masamichi AKAZAWA,  Hideki HASEGAWA,  

[Date]2001/2/21
[Paper #]ED2000-249,SDM2000-203
Concentration of electric field Si nano structures and its effect on tunneling current

Yasuhiko Ishikawa,  Michiharu Tabe,  Kazuaki Sawada,  Makoto Ishida,  

[Date]2001/2/21
[Paper #]ED2000-250,SDM2000-204
STM Observation of surface electron wave on InSa/GaAs (111)A heterostructures

Hiroshi Yamaguchim,  Kiyoshi Kanosawa,  Yoshiro Hirayama,  

[Date]2001/2/21
[Paper #]ED2000-251,SDM2000-205
Study on quantum-size effects and alloying effects of InAs-and InGaAs-quantum dots on GaAs(001) using scanning tunneling spectroscopy

T Yamauchi,  Y Ohyama,  Y Matsuba,  M Tabuchi,  A Nakamura,  

[Date]2001/2/21
[Paper #]ED2000-252,SDM2000-206
Electrostatic Force Microscope Observation of Surface Potential in Doping Superlattice

Y Katano,  T Doi,  S Abe,  H Ohno,  K Yoh,  

[Date]2001/2/21
[Paper #]ED2000-253,SDM2000-207
Large enhancement of optical nonlinearity using quantum dots embedded in a photonic crystal structure for all-optical switch applications

H Nakamura,  S Kohmoto,  N Carlsson,  Y Sugimoto,  K Asakawa,  

[Date]2001/2/21
[Paper #]ED2000-254,SDM2000-208
Proposal and Fabrication of a QMESFET

M Akazawa,  S Kasai,  T Hashizume,  H Hasegawa,  

[Date]2001/2/21
[Paper #]ED2000-255,SDM2000-209
Fabrication of PtSi Schottky Source/Drain vertical MOSFET

M Tsutsui,  T Nagai,  M Asada,  

[Date]2001/2/21
[Paper #]ED2000-256,SDM2000-210
Electron charging characteristics and memory function of silicon quantum-dot floating gate MOS structures

Atsushi Kohno,  Mitsuhisa Ikeda,  Hideki Murakami,  Seiichi Miyazaki,  Masataka Hirose,  

[Date]2001/2/21
[Paper #]ED2000-257,SDM2000-211
Effects of Dot Size and its Distribution on Electron Number Control and Distribution of Potential in MOSFET Memories Based on Silicon Nanocrystal Floating Dots

Haining Wang,  Hideaki Majima,  Takashi Inukai,  Hiroyuki Gomyo,  Masumi Saitoh,  Toshiro Hiramoto,  

[Date]2001/2/21
[Paper #]ED2000-258,SDM2000-212
A Single Tetrahedral-Shaped Recess (TSR) Quantum Dot Memory and principles of operation of the number control of the charges stored in the quantum dot for multi-valued memory

Yuji Awano,  Masashi Shima,  Yoshiki Sakuma,  Yoshihiro Sugiyama,  Naoki Yokoyama,  

[Date]2001/2/21
[Paper #]ED2000-259,SDM2000-213
[OTHERS]

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[Date]2001/2/21
[Paper #]