Electronics-Electron Devices(Date:2001/01/10)

Presentation
表紙

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[Date]2001/1/10
[Paper #]
目次

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[Date]2001/1/10
[Paper #]
A 16.3-GHz CMOS Frequency Divider

Masafumi Nogawa,  Yusuke Ohtomo,  

[Date]2001/1/10
[Paper #]ED2000-219,MW2000-168,ICD2000-179
Low Noise Transimpedance Amplifier with Autematic Gain Control Circuit

K. Takahashi,  H. Ikeda,  T Ohshima,  M. Tsunotani,  T. Ichioka,  T. Kimura,  

[Date]2001/1/10
[Paper #]ED2000-220,MW2000-169,ICD2000-180
The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model

Toshihiko Kosugi,  Tetsuya Suemitsu,  Takatomo Enoki,  Yasuro Yamane,  

[Date]2001/1/10
[Paper #]ED2000-221,MW2000-170,ICD2000-181
Reliability Study of InP-Based HEMTs : Increases in Source and Drain Resistances

Tetsuya Suemitsu,  Yoshino K. Fukai,  Hiroki Sugiyama,  Kazuo Watanabe,  Haruki Yokoyama,  

[Date]2001/1/10
[Paper #]ED2000-222,MW2000-171,ICD2000-182
A 10-Gb/s AlGaAs/InGaAs p-HEMT Distributed EA Driver with a D-Flip-Flop for Optical Fiber Links

Miyo MIYASHITA,  Kazuya YAMAMOTO,  Tsukasa MATSUBARA,  Koji ANDOH,  Norio OKADA,  Kuniaki MOTOSHIMA,  Akira TAKEMOTO,  

[Date]2001/1/10
[Paper #]ED2000-223,MW2000-172,ICD2000-183
AlGaN/GaN Heterojunction-FET Analyzed by Finite Element Method

Nobuhisa TANUMA,  Saburo YOKOKURA,  Munecazu TACANO,  

[Date]2001/1/10
[Paper #]ED2000-224,MW2000-173,ICD2000-184
A 150 W Power Heterojunction FET with High Efficiency for W-CDMA Base Stations

Isao Takenaka,  Koji Ishikura,  Kazuhiro Kishi,  Yasu Ogasawara,  Koichi Hasegawa,  Fumiaki Emori,  

[Date]2001/1/10
[Paper #]ED2000-225,MW2000-174,ICD2000-185
[OTHERS]

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[Date]2001/1/10
[Paper #]