Electronics-Electron Devices(Date:2000/08/18)

Presentation
表紙

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[Date]2000/8/18
[Paper #]
目次

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[Date]2000/8/18
[Paper #]
ED2000-124 / SDM2000-106 / ICD2000-60 Boosted Gate MOS(BGMOS):Leakage-Free Circuits by Device/Circuit Cooperation Scheme

T. Inukai,  M. Takamiya,  K. Nose,  H. Kawaguchi,  T. Sakurai,  T. Hiramoto,  

[Date]2000/8/18
[Paper #]ED2000-124,SDM2000-106,ICD2000-60
ED2000-125 / SDM2000-107 / ICD2000-61 Feasibility Study of the Nonvolatile Hall Memory

Yuji Okuto,  Eigo Nishigami,  Ai Katayama,  

[Date]2000/8/18
[Paper #]ED2000-125,SDM2000-107,ICD2000-61
ED2000-126 / SDM2000-108 / ICD2000-62 Miniband Structures for Modulated Superlattices with Symmetric Gaussian Potential Profile

Kunihiko Asakura,  Masakiyo Suzuki,  Hirofumi Sanada,  Nobuo Nagai,  

[Date]2000/8/18
[Paper #]ED2000-126,SDM2000-108,ICD2000-62
ED2000-127 / SDM2000-109 / ICD2000-63 0.5-1 V 2-GHz RF Front-end Circuits in CMOS/SIMOX

Mitsuru Harada,  Tsuneo Tsukahara,  Jun-ichi Kodate,  Akihiro Yamagishi,  Junzo Yamada,  

[Date]2000/8/18
[Paper #]ED2000-127,SDM2000-109,ICD2000-63
ED2000-128 / SDM2000-110 / ICD2000-64 3.5 Gbps CMOS/SIMOX Transceiver with Limiting Amplifier

Mika Nishisaka,  Kazuyoshi Nishimura,  Yusuke Ohtomo,  

[Date]2000/8/18
[Paper #]ED2000-128,SDM2000-110,ICD2000-64
ED2000-129 / SDM2000-111 / ICD2000-65 A Highly Manufacturable 0.18 um Generation LOGIC Technology

Shuji Ikeda,  

[Date]2000/8/18
[Paper #]ED2000-129,SDM2000-111,ICD2000-65
ED2000-130 / SDM2000-112 / ICD2000-66 Engineering Model for DRAM Refresh Time Prediction

S. Kamohara,  K. Kubota,  M. Moniwa,  K. Ohyu,  A. Ogishima,  

[Date]2000/8/18
[Paper #]ED2000-130,SDM2000-112,ICD2000-66
ED2000-131 / SDM2000-113 / ICD2000-67 A New Substrate Engineering Technique to Realize Silicon on Nothing(SON) Structure Utilizing Surface Migration

Yoshitaka Tsunashima,  Tsutomu Sato,  Ichiro Mizushima,  

[Date]2000/8/18
[Paper #]ED2000-131,SDM2000-113,ICD2000-67
ED2000-132 / SDM2000-114 / ICD2000-68 A Novel Atomic Layer Doping Technology for Ultra-shallow Junction in Sub-0.1μm MOSFETs

K-T. Park,  J-C. Bae,  K-W. Kow,  H. Kurino,  M. Koyanagi,  

[Date]2000/8/18
[Paper #]ED2000-132,SDM2000-114,ICD2000-68
ED2000-133 / SDM2000-115 / ICD2000-69 Sub-0.1μm CMOS Technology : Elevated Source/Drain MOSFETs

Yuji Abe,  Kohei Sugihara,  Naruhisa Miura,  Taisuke Furukawa,  Katsuomi Shiozawa,  Hirokazu Sayama,  Takumi Nakahata,  Toshiyuki Oishi,  Shigemitsu Maruno,  Yasunori Tokuda,  

[Date]2000/8/18
[Paper #]ED2000-133,SDM2000-115,ICD2000-69
ED2000-134 / SDM2000-116 / ICD2000-70 Optimized halo structure for 80nm physical gate CMOS technology with antimony and indium highly angled ion implantation

K. Miyashita,  H. Yoshimura,  M. Takayanagi,  M. Fujiwara,  K. Adachi,  T. Nakayama,  Y. Toyoshima,  

[Date]2000/8/18
[Paper #]ED2000-134,SDM2000-116,ICD2000-70
ED2000-135 / SDM2000-117 / ICD2000-71 Process integration of low-k organic SOG (k=2.9) for Cu dual-damascene interconnects

H. Maruyama,  T. Ohshima,  H. Aoki,  A. Maekawa,  S. Uno,  T. Fukuda,  N. Kobayashi,  K. Hinode,  T. Furusawa,  

[Date]2000/8/18
[Paper #]ED2000-135,SDM2000-117,ICD2000-71
ED2000-136 / SDM2000-118 / ICD2000-72 Multilevel interconnects Technologies Using Cu and low-k Dielectrics

I. Yamamura,  T. Hasegawa,  K. Ikeda,  K. Tokunaga,  M. Fukasawa,  H. Kito,  K. Miyata,  N. Komai,  M. Taguchi,  S. Hirano,  T. Tatsumi,  S. Kadomura,  

[Date]2000/8/18
[Paper #]ED2000-136,SDM2000-118,ICD2000-72
ED2000-137 / SDM2000-119 / ICD2000-73 Cu/poly-Si Damascene Gate Structured MOSFET with Ta and TaN Stacked Barrier

T. Matsuki,  K. Kishimoto,  N. Itoh,  K. Fujii,  K. Yoshida,  K. Ohto,  S. Yamasaki,  T. Shinmura,  K. Kasai,  

[Date]2000/8/18
[Paper #]ED2000-137,SDM2000-119,ICD2000-73
ED2000-138 / SDM2000-120 / ICD2000-74 Damascene Metal Gate Transistor Technology : Reduction of threshold voltage deviation and salicide integration to damascene gate process

Tomohiro SAITO,  Atsushi YAGISHITA,  Kazuaki NAKAJIMA,  Seiji INUMIYA,  Koji MATSUO,  Toshihiko IINUMA,  Atsushi MURAKOSHI,  Yasushi AKASAKA,  Yoshio OZAWA,  Gaku MINAMIHABA,  Yukiteru MATSUI,  Seiichi OMOTO,  Hiroyuki YANO,  Katsuhiko HIEDA,  Yoshitaka TSUNASHIMA,  Kyoichi SUGURO,  Tsunetoshi ARIKADO,  Katsuya OKUMURA,  

[Date]2000/8/18
[Paper #]ED2000-138,SDM2000-120,ICD2000-74
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[Date]2000/8/18
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[Date]2000/8/18
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