Electronics-Electron Devices(Date:2000/07/20)

Presentation
表紙

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[Date]2000/7/20
[Paper #]
目次

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[Date]2000/7/20
[Paper #]
Interface Properties of MOCVD Grown GaAs/InGaP Heterostructures

H. Tanaka,  T. Kikkawa,  T. Nishioka,  H. Ochimizu,  K. Imanishi,  

[Date]2000/7/20
[Paper #]ED2000-92
Magnetically-excited plasma nitridation of Al/GaAs was performed to achive the plasma-damage-less GaN passivation of GaAs

Tomoaki Tojyo,  Hideaki Ikoma,  

[Date]2000/7/20
[Paper #]ED2000-93
The Recovery Process of RIE damage in InGaAs/AlGaAs PHEMT using Recombination Enhanced Defect Reaction

S. Hoshi,  T. Izumi,  T. Ohshima,  M. Tsunotani,  T. Kimura,  

[Date]2000/7/20
[Paper #]ED2000-94
ED2000-95 Memory capability of Ni/p-GaN Schottky contacts

Kenji Shiojima,  Shiro Sakai,  

[Date]2000/7/20
[Paper #]ED2000-95
Electrical Characterization of Metal/GaN Schottky Interfaces : Influence of inhomogeneous Schottky barrier height

Yuji Ito,  Takayuki Sawada,  Kazuaki Imai,  Naohito Kimura,  Siro Sakai,  

[Date]2000/7/20
[Paper #]ED2000-96
Current-Voltage Characteristics of Schottky and MIS Diodes with nm-Thin Insulating Layers

Yousuke OOTA,  Yuuki KASAI,  Syoushin HASHIMOTO,  Kouichi IIYAMA,  Saburo TAKAMIYA,  

[Date]2000/7/20
[Paper #]ED2000-97
Characterization and control of surface and interfaces for GaN-based materials

T. Hashizume,  S. Ootomo,  S. Oyama,  R. Nakasaki,  H. Hasegawa,  

[Date]2000/7/20
[Paper #]ED2000-98
Electronic Status of GaAs(100)Surface with Adsorbed Chalcogen Atoms

Yuuki KASAI,  Youichi YAMAMURA,  Takao INOKUMA,  Kouichi IIYAMA,  Saburo TAKAMIYA,  

[Date]2000/7/20
[Paper #]ED2000-99
[OTHERS]

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[Date]2000/7/20
[Paper #]
裏表紙

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[Date]2000/7/20
[Paper #]