Electronics-Electron Devices(Date:2000/06/23)

Presentation
表紙

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[Date]2000/6/23
[Paper #]
CONTENTS

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[Date]2000/6/23
[Paper #]
ED2000-76 / SDM2000-76 SMC of a-Si in an electric field and its application to TFTs

Jin Jang,  Soo Young Yoon,  Seong Jin Park,  Kyung Ho Kim,  Kyu Sik Cho,  

[Date]2000/6/23
[Paper #]ED2000-76,SDM2000-76
ED2000-77 / SDM2000-77 Reliability of Low Temperature Poly-Silicon Thin Film Transistors under Dynamic Stress

Y. Uraoka,  T. Hatayama,  T. Fuyuki,  T. Kawamura,  Y. Tsuchihashi,  

[Date]2000/6/23
[Paper #]ED2000-77,SDM2000-77
ED2000-78 / SDM2000-78 High performance CMOS technology by using low temperature Poly-Si TFTs on a glass substrate

Michiko Takei,  Tatsuya Uematsu,  Kenich Yoshino,  Fumiyo Takeuchi,  Yasuyoshi Mishima,  Nobuo Sasaki,  

[Date]2000/6/23
[Paper #]ED2000-78,SDM2000-78
ED2000-79 / SDM2000-79 Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing : Dependences of Poly-Si Grain on Energy Density and Shot Number

Naoto Matsuo,  Naoya Kawamoto,  Ryouhei Taguchi,  Hisashi Abe,  Tomoyuki Nouda,  Hiroki Hamada,  

[Date]2000/6/23
[Paper #]ED2000-79,SDM2000-79
ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries

Seong-jong Yoo,  Jongho Lee,  Hyungcheol Shin,  

[Date]2000/6/23
[Paper #]ED2000-80,SDM2000-80
ED2000-81 / SDM2000-81 A 4 kV SiC Epitaxial PN Junction Diode with a Low On-resistance

K. Fujihira,  S. Tamura,  T. Kimoto,  H. Matsunami,  

[Date]2000/6/23
[Paper #]ED2000-81,SDM2000-81
ED2000-82 / SDM2000-82 Excimer Laser Doping for ZnO pn Diode Fabrication

Toru Aoki,  David C. Look,  Yoshinori Hatanaka,  

[Date]2000/6/23
[Paper #]ED2000-82,SDM2000-82
ED2000-83 / SDM2000-83 1/f noise in Schottky barrier structure

J. I. Lee,  I. K. Han,  H.J. Kim,  D. M. Kim,  J. Grini,  A. Chovet,  S. A. Dimitriadis,  

[Date]2000/6/23
[Paper #]ED2000-83,SDM2000-83
ED2000-84 / SDM2000-84 Characterization of semiconductor structures in the VUV wavelength range using spectroscopic ellipsometry and spectroscopic photometry.

Pierre BOHER,  Jean Philippe PIEL,  Patrick EVRARD,  Christophe DEFRANOUX,  Jean Louis STEHLE,  

[Date]2000/6/23
[Paper #]ED2000-84,SDM2000-84
ED2000-85 / SDM2000-85 Deep sub-μm Scale Photoluminescence Image of Wide Bandgap Materials by Cryogenic Scanning Microscope

Masahiro Yoshimoto,  Junji Saraie,  

[Date]2000/6/23
[Paper #]ED2000-85,SDM2000-85
ED2000-86 / SDM2000-86 Fabrication and Device Application of Surface Acoustic Wave coupled with Semiconductor

C. Kaneshiro,  T. Suda,  Y. Aoki,  C. Hong,  K. Koh,  K. Hohkawa,  

[Date]2000/6/23
[Paper #]ED2000-86,SDM2000-86
ED2000-87 / SDM2000-87 A 0.5-μm-rule Thin-film SOI Power MOSFET for Radio-frequency applications

Satoshi Matsumoto,  Yasushi Hiraoka,  Tatsuo Sakai,  

[Date]2000/6/23
[Paper #]ED2000-87,SDM2000-87
ED2000-88 / SDM2000-88 The influence of parasitic bipolar transistor on high-frequency performance of thin-film SOI power MOSFETs

Yasushi Hiraoka,  Satoshi Matsumoto,  Tatsuo Sakai,  

[Date]2000/6/23
[Paper #]ED2000-88,SDM2000-88
ED2000-89 / SDM2000-89 A SiRF Switch MMIC for the Cellular Frequency Band Using SOI-CMOS Technology

Atsushi Kanda,  Masahiro Muraguchi,  

[Date]2000/6/23
[Paper #]ED2000-89,SDM2000-89
ED2000-90 / SDM2000-90 Photocurrent Amplification Using SOI-MOS Device

Yuko Yryu,  Tanemasa Asano,  

[Date]2000/6/23
[Paper #]ED2000-90,SDM2000-90
ED2000-91 / SDM2000-91 Ultra shallow Boron diffusion in SIMOX and UNIBOND Structures

Hideo Uchida,  Masaya Ichimura,  Eisuke Arai,  

[Date]2000/6/23
[Paper #]ED2000-91,SDM2000-91
[OTHERS]

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[Date]2000/6/23
[Paper #]