Electronics-Electron Devices(Date:2000/05/11)

Presentation
表紙

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[Date]2000/5/11
[Paper #]
目次

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[Date]2000/5/11
[Paper #]
Photoluminescence properties of Eu implanted GaN

Yasuo Nakanishi,  Akihiro Wakahara,  Akira Yoshida,  Takeshi Ohshima,  Hisayoshi Itoh,  

[Date]2000/5/11
[Paper #]ED2000-16, CPM2000-1, SDM2000-16
Crystalline quality of AlGaInN quaternary alloys grown by MOVPE

Masayoshi Kosaki,  Youhei Yukawa,  Michihiko Kariya,  Shugo Nitta,  Shigeo Yamaguchi,  Hisaki Kato,  Hiroshi Amano,  Isamu Akasaki,  

[Date]2000/5/11
[Paper #]ED2000-17, CPM2000-2, SDM2000-17
Stress relief in Al_xGa_<1-x>N/GaN heterostructure measured by in-situ stress monitoring

Shinji Terao,  Motoaki Iwaya,  Ryo Nakamura,  Satoshi Kamiyama,  Hiroshi Amano,  Isamu Akasaki,  

[Date]2000/5/11
[Paper #]ED2000-18, CPM2000-3, SDM2000-18
Epitaxial growth of GaN film on the lattice matched LSAT substrate

K. Yoshimura,  M. Sumiya,  H. Fujioka,  S. Fuke,  

[Date]2000/5/11
[Paper #]ED2000-19, CPM2000-4, SDM2000-19
GaN growth on sapphire substrtates using Al buffer layer

K. Tanaka,  K. Kuwahara,  K. Ohtuka,  M. Sumiya,  Y. Takano,  S. Fuke,  

[Date]2000/5/11
[Paper #]ED2000-20, CPM2000-5, SDM2000-20
Growth experiments of GaN crystals from wetting solution

Akira Tanaka,  Toshiya Murakami,  Hironobu Katsuno,  

[Date]2000/5/11
[Paper #]ED2000-21, CPM2000-6, SDM2000-21
Reduction of dislocation density in GaN using FACELO (Facet Controlled Epitaxial Lateral Overgrowth)

Hiromitsu Mizutani,  Katsuya Nishiyama,  Atsushi Motogaito,  Hideto Miyake,  Kazumasa Hiramatsu,  Yasushi Iyechika,  Takayoshi Maeda,  

[Date]2000/5/11
[Paper #]ED2000-22, CPM2000-7, SDM2000-22
Fabrication and Characterization of GaN with buried WN_x contact by ELO

Masahiro Haino,  Motoo Yamaguchi,  Atsushi Motogaito,  Hideto Miyake,  Kazumasa Hiramatsu,  Nobuhiko Sawaki,  Yasusi Iyechika,  Takayoshi Maeda,  

[Date]2000/5/11
[Paper #]ED2000-23, CPM2000-8, SDM2000-23
GaN shottky diode characterization and recovering with etching damage by RIE

Masaharu Nakaji,  Hiroyasu Ishikawa,  Takashi Egawa,  Takashi Jimbo,  Masayoshi Umeno,  

[Date]2000/5/11
[Paper #]ED2000-24, CPM2000-9, SDM2000-24
Silicon Carbide Power MOSFETs

Rajesh Kumar Malhan,  

[Date]2000/5/11
[Paper #]ED2000-25, CPM2000-10, SDM2000-25
Epitaxial Growth of High-Purity SiC and Application to Power Devices

Tsunenobu Kimoto,  Hiroshi Yano,  Satoshi Tamura,  Nao Miyamoto,  Keiko Fujihira,  Hiroyuki Matsunami,  

[Date]2000/5/11
[Paper #]ED2000-26, CPM2000-11, SDM2000-26
Pulsed Laser Process on SiC and the Application to UV-Photosensitive Sensors

K. Nakashima,  

[Date]2000/5/11
[Paper #]ED2000-27, CPM2000-12, SDM2000-27
Deep level characterization for 3C-SiC/Si treated by a hydrogen plasma

F. Sobue,  M. Kato,  M. Ichimura,  E. Arai,  Y. Tokuda,  N. Yamada,  

[Date]2000/5/11
[Paper #]ED2000-28, CPM2000-13, SDM2000-28
[OTHERS]

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[Date]2000/5/11
[Paper #]