Electronics-Electron Devices(Date:2000/04/14)

Presentation
表紙

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[Date]2000/4/14
[Paper #]
目次

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[Date]2000/4/14
[Paper #]
Electronic and Crystallographic Properties of Polycrystalline Silicon Films and Its Fabrication Technologies

T. Sameshima,  

[Date]2000/4/14
[Paper #]ED2000-10, SDM2000-10
Device Simulation of Grain Boundaries in Poly-Si Films

Mutsumi Kimura,  Seiichiro Higashi,  Toshiyuki Sameshima,  

[Date]2000/4/14
[Paper #]ED2000-11, SDM2000-11
Characterization of Stress, Defects and Hydrogen in Low-Temperature Poly-Si by Raman Spectroscopy

Kuninori KITAHARA,  

[Date]2000/4/14
[Paper #]ED2000-12, SDM2000-12
Crystal Growth Model of Low-Temperature Processed Poly-Si by Excimer Laser Annealing Considering the Recovery and Recrystallization : Based on Dislocation Theory

Naoto Matsuo,  Hiroki Hamada,  

[Date]2000/4/14
[Paper #]ED2000-13, SDM2000-13
Limit of Mobility Enhancement of Excimer Laser Crystallized Poly-Si TFTs

Akito Hara,  Nobuo Sasaki,  

[Date]2000/4/14
[Paper #]ED2000-14, SDM2000-14
Charactaristics of the poly-Si grains prepared by ELA method

Naoya KAWAMOTO,  Ryouhei TAGUCHI,  Naoto MATSUO,  Youichiro AYA,  Tomoyuki NOUDA,  Hiroki HAMADA,  

[Date]2000/4/14
[Paper #]ED2000-15, SDM2000-15
[OTHERS]

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[Date]2000/4/14
[Paper #]