Electronics-Electron Devices(Date:2000/04/13)

Presentation
表紙

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[Date]2000/4/13
[Paper #]
目次

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[Date]2000/4/13
[Paper #]
Ultra-Large Grain Growth Technology for Advanced Si Thin-Film Devices

Masakiyo MATSUMURA,  

[Date]2000/4/13
[Paper #]ED2000-1, SDM2000-1
High Rate Growth of High Quality Polysilicon at Low Temperatures Using Plasma CVD

Michio Kondo,  Susumu Suzuki,  Toshihisa Kitagawa,  Akihisa Matsuda,  

[Date]2000/4/13
[Paper #]ED2000-2, SDM2000-2
Low-temperature preparation of poly-Si films by catalytic CVD and application to TFTs

Atsushi Masuda,  Akira Izumi,  Hideki Matsumura,  

[Date]2000/4/13
[Paper #]ED2000-3, SDM2000-3
Poly-Si TFTs Fabricated at a Substrate Temperature of 110℃

Dharam Pal Gosain,  Setsuo Usui,  Akio Machida,  Takashi Noguchi,  

[Date]2000/4/13
[Paper #]ED2000-4, SDM2000-4
Development of high-performance poly-Si TFTs and their application to high-definition LCD light-valves

Hiroki Hamada,  Yoichiro Aya,  Hisashi Abe,  Tomoyuki Nouda,  Isao Hasegawa,  Yoshio Miyai,  

[Date]2000/4/13
[Paper #]ED2000-5, SDM2000-5
Characteristics of p-Si TFT on Al/glass substrates

Y. Mishima,  K. Yoshino,  M. Takei,  N. Sasaki,  

[Date]2000/4/13
[Paper #]ED2000-6, SDM2000-6
Device Simulation of Reliability in Low Temperature Poly-Si TFTs'

T. Ohno,  Y. Uraoka,  T. Hatayama,  T. Fuyuki,  Y. Morita,  

[Date]2000/4/13
[Paper #]ED2000-7, SDM2000-7
Si dot TFT memory

Kenichi Taira,  Noriyuki Kawashima,  Kazumasa Nomoto,  Takashi Noguchi,  Usui/Setsuo U,  

[Date]2000/4/13
[Paper #]ED2000-8, SDM2000-8
Hot-carrier effects and gate currents of low temperature poly-Si TFT's for Liquid Crystal Display

Y. IMai,  K. Oohata,  T. Satoh,  H. Tango,  

[Date]2000/4/13
[Paper #]ED2000-9, SDM2000-9
[OTHERS]

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[Date]2000/4/13
[Paper #]