Electronics-Electron Devices(Date:2000/02/09)

Presentation
表紙

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[Date]2000/2/9
[Paper #]
目次

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[Date]2000/2/9
[Paper #]
Fabrication of Single-Electron Devices by Selective Area MOVPE and Their Applications to Single-Electron Circuits

F. Nakajima,  J. Motohisa,  T. Fukui,  

[Date]2000/2/9
[Paper #]ED99-290,SDM99-183
Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation

Yukio Yasuda,  Kenta Izumikawa,  Akira Sakai,  Shigeaki Zaima,  

[Date]2000/2/9
[Paper #]ED99-291,SDM99-184
Silicon Stacked Transistor for PLEDM

T. Kisu,  K. Nakazato,  

[Date]2000/2/9
[Paper #]ED99-292,SDM99-185
Oxidation of Si nano-structures for single-electron devices

M. Nagase,  A. Fujiwara,  K. Yamazaki,  Y. Takahashi,  K. Kurihara,  

[Date]2000/2/9
[Paper #]ED99-293,SDM99-186
Mechanism of Potential Profile Formation in Si SETs using Pattern-Dependent Oxidation(PADOX)

Seiji Horiguchi,  Masao Nagase,  Kenji Shiraishi,  Hiroyuki Kageshima,  Yasuo Takahashi,  Katsumi Murase,  

[Date]2000/2/9
[Paper #]ED99-294,SDM99-187
Sub-μm Si Single-Electron Tunneling Devices on Self-Undulated Hyper-Thin Silicon-On-Insulator Films

Ken Uchida,  Junji Koga,  Ryuji Ohba,  Shin-ichi Takagi,  Akira Toriumi,  

[Date]2000/2/9
[Paper #]ED99-295,SDM99-188
Si Dot Thin-Film-Transistor Memory

Kazumasa Nomoto,  Pal Gosain Dharam,  Takashi Noguchi,  Setsuo Usui,  Yoshifumi Mori,  

[Date]2000/2/9
[Paper #]ED99-296,SDM99-189
Voltage gain of Si single-electron transistor and analysis of performance of nMOS-type inverter with resistive load

Liu K-T,  A. Fujiwara,  Y. Takahashi,  K. Murase,  Y. Horikoshi,  

[Date]2000/2/9
[Paper #]ED99-297,SDM99-190
Si complementary single-electron inverter : Fabrication using V-PADOX and measurements of its characteristics

Y. Ono,  Y. Takahashi,  K. Yamazaki,  M. Nagase,  H. Namatsu,  K. Kurihara,  K. Murase,  

[Date]2000/2/9
[Paper #]ED99-298,SDM99-191
A Directional Current Switch Using Integrated Si SETs

Nobuyoshi Takahashi,  Hiroki Ishikuro,  Toshiro Hiramoto,  

[Date]2000/2/9
[Paper #]ED99-299,SDM99-192
Carrier Transport in Ultrasmall MOSFETs

Hisao Kawaura,  Toshitsugu Sakamoto,  Toshio Baba,  

[Date]2000/2/9
[Paper #]ED99-300,SDM99-193
Device Design of Solid-State Biprism for Observation of Electron Interference

Nobuya Machida,  Kazuhito Furuya,  

[Date]2000/2/9
[Paper #]ED99-301,SDM99-194
An Electron Wave Interference Transistor with a Novel Recess-Etched Grating Structure Fabricated Using Electron Beam Lithography

Tomohiro Murata,  Shigeru Kishimoto,  Koichi Maezawa,  Takashi Mizutati,  Tetsuyoshi Ishii,  Toshiaki Tamamura,  

[Date]2000/2/9
[Paper #]ED99-302,SDM99-195
Microscopic Analyses on InGaAs Ridge Quantum Wire Structures Grown by Selective Molecular Beam Epitaxy

Jiang C,  H. Fujikura,  T. Muranaka,  H. Hasegawa,  

[Date]2000/2/9
[Paper #]ED99-303,SDM99-196
Observation of N-shaped negative differential resistance in InGaAs quantum wire FET

J.Kim S,  T. Sugaya,  M. Ogura,  Y. Sugiyama,  

[Date]2000/2/9
[Paper #]ED99-304,SDM99-197
Transport properties of 2 dimensional electron gas channels with embedded InGaAs or InAlAs quantum dots

Takuya Kawazu,  Takeshi Noda,  Kim Hoon,  Yasushi Nagamune,  Shinichi Hori,  Jyunya Irisawa,  Hiroyuki Sakaki,  

[Date]2000/2/9
[Paper #]ED99-305,SDM99-198
[OTHERS]

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[Date]2000/2/9
[Paper #]