エレクトロニクス-電子デバイス(開催日：1999/07/23)

タイトル/著者/発表日/資料番号
表紙

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[発表日]1999/7/23
[資料番号]
CONTENTS

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[発表日]1999/7/23
[資料番号]
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length

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[発表日]1999/7/23
[資料番号]ED99-113
Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher

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[発表日]1999/7/23
[資料番号]ED99-114
1-Mbit セルラオートマトン処理用連想メモリLSI : CAM^2

池永 剛,  小倉 武,  

[発表日]1999/7/23
[資料番号]ED99-115
Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4 μm nMOSFET

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[発表日]1999/7/23
[資料番号]ED99-116
Fast EM Evaluation by Highly Accelerated Current Density

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[発表日]1999/7/23
[資料番号]ED99-117
Simple Formulas for Interconnect Delay and Crosstalk Considering the Transition Time of Ramp Signals

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[発表日]1999/7/23
[資料番号]ED99-118
Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch

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[発表日]1999/7/23
[資料番号]ED99-119
Column Reference 1T1C Ferroelectric Memory

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[発表日]1999/7/23
[資料番号]ED99-120
Pt/SrBi_2Ta_2O_9/Pt/SiO_2/Si MFMIS構造およびFETの電気的特性 : MFMキャパシタ/Ptフローティングゲート面積比依存性

徳光 永輔,  天野 敦弘,  藤井 厳,  石原 宏,  

[発表日]1999/7/23
[資料番号]ED99-121
High Density FRAM Technology

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[発表日]1999/7/23
[資料番号]ED99-122
Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.

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[発表日]1999/7/23
[資料番号]ED99-123
金属モード反応性スパッタリングで複合、粉末、混合物ターゲットを用いて作製したPZT薄膜の特性

金 済徳,  川越 進也,  佐々木 公洋,  畑 朋延,  

[発表日]1999/7/23
[資料番号]ED99-124
1Gbit DDR SDRAM for Low Voltage and High Speed Application (Invited)

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[発表日]1999/7/23
[資料番号]ED99-125
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology

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[発表日]1999/7/23
[資料番号]ED99-126
Studies on the Formation of SiO_2 Films Using Liquid Phase Deposition Method and Their Basic Characteristics Related with the Application to Electronic Devices

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[発表日]1999/7/23
[資料番号]ED99-127
The study on the sidewall films formed during Si trench etching in Cl_2/HBr based plasmas

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[発表日]1999/7/23
[資料番号]ED99-128
Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films

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[発表日]1999/7/23
[資料番号]ED99-129
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories

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[発表日]1999/7/23
[資料番号]ED99-130
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