Electronics-Electron Devices(Date:1999/04/23)

Presentation
表紙

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[Date]1999/4/23
[Paper #]
目次

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[Date]1999/4/23
[Paper #]
Characterization of poly-Si films prepared by combining SPC and ELA methods

Yoichiro Aya,  Hisashi Abe,  Tomoyuki Nouda,  Isao Hasegawa,  Yoshio Miyai,  Hiroki Hamada,  

[Date]1999/4/23
[Paper #]ED99-11
Study of Growth Model of Low-Temperature Processed Poly-Si Film Prepared by Excimer Laser Annealing : from vicwpoint of dislocation theory

Naoto Matsuo,  Yoichiro Aya,  Naoya Kawamoto,  Fakhrul Anwar,  Tomoyuki Nouda,  Hiroki Hamada,  Tadaki Miyoshi,  

[Date]1999/4/23
[Paper #]ED99-12
Characterization of Low Temperature Polycrystalline Silicon Thin Films Prepared by the Excimer Laser Annealing Technique : Relationship between the excimer laser annealing process and the quality of the poly-crystalline Silicon thin film

M. Nishitani,  H. Nishitani,  M. Sakai,  M. Goto,  M. Yamamoto,  K. Mizonoguchi,  S. Nakashima,  

[Date]1999/4/23
[Paper #]ED99-13
Hydrogenation Effects on Electron Mobility of Poly-Silicon Crystallized at Low-Temperature for TFT-LCD

Kuninori KITAHARA,  

[Date]1999/4/23
[Paper #]ED99-14
Semicoductor-Metal Transition and Negative mgnetoresistance Varying Gate Volage in High-Mobility Poly-Si TFT : Microscopic Transport properties at Low Temperatures

Shuichi Ishida,  Tadashi Serikawa,  

[Date]1999/4/23
[Paper #]ED99-15
Adsorption of Organic carbon and Growth of Native Oxide on Si Wafer

Naoya KAWAMOTO,  Naoto MATSUO,  Daisuke AIHARA,  Tatsuo FUKUOKA,  Tadaki MIYOSHI,  

[Date]1999/4/23
[Paper #]ED99-16
Analysis of Cohtamination Adhesion on Silicon Wafer

Kenichi Uemura,  Toshihiro Morimoto,  

[Date]1999/4/23
[Paper #]ED99-17
C-V Characteristics of Ultrathin SOI Structures Having a Buried Tunnel Oxide

Yasuhiko Ishikawa,  Shigenori Makita,  Masaaki Kosugi,  Takeshi Mizuno,  Michiharu Tabe,  

[Date]1999/4/23
[Paper #]ED99-18
Influence of oxygen dilution on the oxide growth mechanisms : rapid thermal oxidation of silicon

Yasumi Kotani,  Yasuhisa Omura,  

[Date]1999/4/23
[Paper #]ED99-19
Formation of Ultra-thin Gate SiO_2 at Low Temperatures by Activated Oxygen and Application to MOSFET

Y. Ueda,  K. Moriizumi,  T. Fuyuki,  H. Matsunami,  

[Date]1999/4/23
[Paper #]ED99-20
Analysis of Direct Tunneling of Thin SiO_2 Film in the Low Voltages : Effects of multi- folded valleys and inelastic scattering

J. YAMAUCHI,  Y. KITAGAWA,  N. MATSUO,  T. MIURA,  T. MIYOSHI,  

[Date]1999/4/23
[Paper #]ED99-21
Characterization of electronic properties of hydrogen terminated Si surfaces by UHV-based contactless capacitance-voltage method

Toshiyuki YOSHIDA,  Tamotsu HASHIZUME,  Hideki HASEGAWA,  Takamasa SAKAI,  

[Date]1999/4/23
[Paper #]ED99-22
Ion-assisted oxidation with ECR plasma Effects of ion-irradiation

S. Matsuo,  T. Sadoh,  H. Nakashima,  T. Tsurushima,  

[Date]1999/4/23
[Paper #]ED99-23
Oxidation of Si at low temperature by magnetically excited plasma

Tatsuaki Tsukuda,  Hideaki Ikoma,  

[Date]1999/4/23
[Paper #]ED99-24
Fowler-Nordheim Current Stress Resistance of Si Oxynitride grown with Magnetically Excited Plasma

Masayuki Tachikawa,  Hideaki Ikoma,  

[Date]1999/4/23
[Paper #]ED99-25
Sub 50 nm metal gate Schottky Source/Drain MOSFET on SOI Substrate

W. Saitoh,  A. Itoh,  S. Yamagami,  M. Asada,  

[Date]1999/4/23
[Paper #]ED99-26
[OTHERS]

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[Date]1999/4/23
[Paper #]