Electronics-Electron Devices(Date:1998/11/06)

Presentation
表紙

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[Date]1998/11/6
[Paper #]
目次

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[Date]1998/11/6
[Paper #]
Growth of Cubic GaN by Metalorganic Molecular Beam Epitaxy

T. Kurobe,  J. Suda,  H. Matsunami,  

[Date]1998/11/6
[Paper #]ED98-133,CPM98-136
Incorporation of hexagonal GaN into cubic GaN grown by metalorganic vapor phase epitaxy

Masahiro Ogawa,  Teruki Ishido,  Mitsuru Funato,  Shizuo Fujita,  Shigeo Fujita,  

[Date]1998/11/6
[Paper #]ED98-134,CPM98-137
Crystal structure and optical property of polycrystalline GaN grown on ZnO/Si and silica glass substrate

Naoya Murata,  Hikari Tochishita,  Tsutomu Araki,  Michio Kadota,  Yasushi Nanishi,  

[Date]1998/11/6
[Paper #]ED98-135,CPM98-138
Phosphorus composition increase in GaN-rich GaNP by gas source MBE

H. Tampo,  H. Asahi,  K. Iwata,  M. Hiroki,  K. Asami,  S. Gonda,  

[Date]1998/11/6
[Paper #]ED98-136,CPM98-139
RF-Molecular Beam Epitaxial high-speed Growth of GaN with GaN buffer layer grown by Migration Enhanced Epitaxy

Daisuke SUGIHARA,  Akihiko KIKUCHI,  Kazuhide KUSAKABE,  Kouichi KUSHI,  Hajime SASAMOTO,  Shinichi NAKAMURA,  Katsumi KISHINO,  

[Date]1998/11/6
[Paper #]ED98-137,CPM98-140
Improvements of structural and optical characteristics of RF-MBE grown GaN epitaxial thin films by nitrogen radical irradiation

Satoshi Kurai,  Shuichi Kubo,  Taiichi Sugita,  Akira Kawabe,  Yoichi Yamada,  Tsunemasa Taguchi,  

[Date]1998/11/6
[Paper #]ED98-138,CPM98-141
Characterization of crystalline and optical properties of ternary GaInN

Shugo NITTA,  Michihiko KARIYA,  Shigeo YAMAGUCHI,  Tetsuya TAKEUCHI,  Hiroshi AMANO,  Isamu AKASAKI,  

[Date]1998/11/6
[Paper #]ED98-139,CPM98-142
Quantum Chemical Calculations of Gas Phase Reaction of Al(CH_3)_3 and NH_3 in Atmospheric Pressure MOVPE

Koh Matsumoto,  Nakao Akutsu,  Hiroki Tokunaga,  Akitomo Tachibana,  

[Date]1998/11/6
[Paper #]ED98-140,CPM98-143
Characteristics of MOCVD-grown GaN MESFET on sapphire

Takashi EGAWA,  Hiroyasu ISHIKAWA,  Kouichi NAKAMURA,  Takashi JIMBO,  Masayoshi UMENO,  

[Date]1998/11/6
[Paper #]ED98-141,CPM98-144
High temperature operation GaN MESFET

Seikoh Yoshida,  Joe Suzuki,  

[Date]1998/11/6
[Paper #]ED98-142,CPM98-145
Microwave Performance of AlGaN/GaN HJFETs

K. Kunihiro,  K. Kasahara,  S. Ohkubo,  Y. Takahashi,  Y. Ohno,  

[Date]1998/11/6
[Paper #]ED98-143,CPM98-146
Strain and electrical properties of AlGaN/GaN grown on sapphire

H. ISHIKAWA,  K. NAKAMURA,  T. EGAWA,  T. JIMBO,  M. UMENO,  

[Date]1998/11/6
[Paper #]ED98-144,CPM98-147
Low resistance Ta/Ti Ohmic contacts for p-type GaN

Masaaki Suzuki,  Toshiyuki Kawakami,  Tomoyuki Arai,  Setsuko Kobayashi,  Yasuo Koide,  Masanori Murakami,  Toshiya Uemura,  Naoki Shibata,  

[Date]1998/11/6
[Paper #]ED98-145,CPM98-148
Fundamental Study on BGaN-Based UV Lasers

T. HONDA,  M. KURIMOTO,  M. TSUBAMOTO,  Y KUGA,  H. KAWANISHI,  

[Date]1998/11/6
[Paper #]ED98-146,CPM98-149
STUDY ON OVERGROWTH OF GaN FOR III-V NITRIDE INNER STRIPE LASERS

S. Nakamura,  M. Ishida,  T. Hashimoto,  M. Orita,  O. Imafuji,  M. Yuri,  T. Sugino,  K. Itoh,  

[Date]1998/11/6
[Paper #]ED98-147,CPM98-150
[OTHERS]

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[Date]1998/11/6
[Paper #]