Electronics-Electron Devices(Date:1998/07/22)

Presentation
表紙

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[Date]1998/7/22
[Paper #]
目次

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[Date]1998/7/22
[Paper #]
Potentail Profile Measurements of Compound Semiconductor Devices Using Kelvin Probe Force Microscopy

Takashi Mizutani,  

[Date]1998/7/22
[Paper #]ED98-84
Fabrication of lateral n-i-p-i structure and its characterization by electrostatic force microscope

S. Takabayashi,  Y. Kitasho,  H. Kazama,  K. Yoh,  

[Date]1998/7/22
[Paper #]ED98-85
Interface characterization of GaAs-MIS diode using electroreflectance technique

Kimihiko Ito,  Yasunori Mochizuki,  Yasunobu Nashimoto,  Masashi Mizuta,  

[Date]1998/7/22
[Paper #]ED98-86
Photoreflectance Characterization of InAlAs/InGaAs Quantum Well and HEMT Structures

H. Sugiyama,  H. Yokoyama,  T. Kobayashi,  K. Wada,  

[Date]1998/7/22
[Paper #]ED98-87
Characterization of emitter/base interface in InGaP-HBT wafer using Photoreflectance method : Photovoltaic effect study

Natsumi Ueda,  Hirotatsu Ishii,  Junjiroh Kikawa,  Tsugunori Okumura,  

[Date]1998/7/22
[Paper #]ED98-88
Schottky Characteristics of InAlAs Grown by MOCVD

Tamotsu Kimura,  Shu Goto,  Tomoyuki Oshima,  Hironobu Moriguchi,  Takashi Ueda,  Masanori Tsunotani,  

[Date]1998/7/22
[Paper #]ED98-89
Effect of process-induced damage in the subsurface region on GaAs Schottky diodes

T. Okumura,  

[Date]1998/7/22
[Paper #]ED98-90
Formation and control of Schottky contacts on compound semiconductors by in situ electrochemical process

Chinami KANESHIRO,  Taketomo SATO,  Yuji KOYAMA,  Tamotsu HASHIZUME,  Hideki HASEGAWA,  

[Date]1998/7/22
[Paper #]ED98-91
Low contact resistance, thermally stable ohmic contacts

Yasushi Shiraishi,  Tadashi Maeda,  

[Date]1998/7/22
[Paper #]ED98-92
Interfacial reaction and Electrical Properties in the Al/Ti/InP Contact

Mayumi B. TAKEYAMA,  Atsushi NOYA,  Tamotsu HASHIZUME,  Hideki HASEGAWA,  

[Date]1998/7/22
[Paper #]ED98-93
Electrical Properties of Metal/GaN Schottky and Insulator/GaN Interfaces and Effects of Thermal Annealing

Takayuki Sawada,  Masakazu Sawada,  Yuji Yamagata,  Kazuaki Imai,  Kouichi Iizuka,  Masaki Yoshino,  Hidemasa Tomozawa,  

[Date]1998/7/22
[Paper #]ED98-94
Electrical characteristics and thermal stability of W, WSiN, Nb contacts to p- and n-type GaN

Kenji Shiojima,  David T. McInturff,  Jerry M. Woodall,  Paul A. Grudowski,  Christopher J. Eiting,  Russ D. Dupuis,  

[Date]1998/7/22
[Paper #]ED98-95
Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-GaN.

Tomoyuki Maeda,  Satoshi Fujita,  Yasuo Koide,  Masanori Murakami,  Toshiya Uemura,  Naoki Shibata,  

[Date]1998/7/22
[Paper #]ED98-96
Two-Step GaAs/AlGaAs Selective Dry Etching Using SiCl_4/SF_6/N_2 Gas

Tomoya Uda,  Mitsuru Nishitsuji,  Kaoru Inoue,  Tsuyoshi Tanaka,  Daisuke Ueda,  

[Date]1998/7/22
[Paper #]ED98-97
[OTHERS]

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[Date]1998/7/22
[Paper #]