Electronics-Electron Devices(Date:1998/07/21)

Presentation
表紙

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[Date]1998/7/21
[Paper #]
目次

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[Date]1998/7/21
[Paper #]
Room Temperature Single Electron Transistor formed by AFM Nano-Oxidation Process

Kazuhiko Matsumoto,  

[Date]1998/7/21
[Paper #]ED98-76
SEM/AFM Based Nanofabrication of Carbonaceous Masks for Selective Growth on Semiconductor Surfaces

Adrian Avramescu,  Akio Ueta,  Katsuhiro Uesugi,  Ikuo Suemune,  

[Date]1998/7/21
[Paper #]ED98-77
Fabrication and Characterization of Compound Semiconductor Single Electron Devices Having Novel Gate Structures

Hiroshi Okada,  Yoshihiro Sato,  Hajime Fujikura,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1998/7/21
[Paper #]ED98-78
Fabrication of the Metal dot array by Electrochemical Process

Taketomo SATO,  Chinami KANESHIRO,  Hiroshi OKADA,  Hideki HASEGAWA,  

[Date]1998/7/21
[Paper #]ED98-79
GaAs surface passivation with GaS thin film and its application

Naoya Okamoto,  Naoki Hara,  Tsuyoshi Takahashi,  Hitoshi Tanaka,  Masahiko Takikawa,  

[Date]1998/7/21
[Paper #]ED98-80
Formation of insulating film on GaAs using magnetically excited plasma

Satoshi Wada,  Keisuke Kanazawa,  Nariaki Okamoto,  Hideaki Ikoma,  

[Date]1998/7/21
[Paper #]ED98-81
Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method

Akira Izumi,  Atsushi Masuda,  Hideki Matsumura,  

[Date]1998/7/21
[Paper #]ED98-82
In-Situ UHV Study on Formation Process of ultrathin Si layer on GaAs(001)for surface Passivation

N. Tsurumi,  M. Mutoh,  T. Hasizume,  H. Hasegawa,  

[Date]1998/7/21
[Paper #]ED98-83
[OTHERS]

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[Date]1998/7/21
[Paper #]