Electronics-Electron Devices(Date:1998/05/22)

Presentation
表紙

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[Date]1998/5/22
[Paper #]
目次

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[Date]1998/5/22
[Paper #]
[CATALOG]

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[Date]1998/5/22
[Paper #]
CdZnTe Epitaxial Growth and Doping Method by Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition

Daiji Noda,  Toru Aoki,  Yoichiro Nakanishi,  Yoshinori Hatanaka,  

[Date]1998/5/22
[Paper #]
Characteristics of Iodine doping in CdZnTe layers grown by metalorganic vapor phase epitxy(II)

Fumihito Inukai,  Yoshihiko Asai,  Toru Nimura,  Mitsuyoshi Miyata,  Noriaki Araki,  Kazuhito Yasuda,  

[Date]1998/5/22
[Paper #]
Characteristics of Dry Etching in CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy

Toru Nimura,  Yoshihiko Asai,  Fumihito Inukai,  Noriaki Araki,  Mitsuyoshi Miyata,  Kazuhito Yasuda,  

[Date]1998/5/22
[Paper #]
Lattice Parameter of Melt Grown ZnSe Single Crystals by the Bond Method

Haruhiko Udono,  Isao Kikuma,  Yasumasa Okada,  

[Date]1998/5/22
[Paper #]
Hetero Epitaxial Growth of Indium Nitride Films on Al_2O_3(11-20)

Hisao Saiki,  Masato Onishi,  Kouji Shimada,  Jyun Gemba,  Akihiro Wakahara,  Akira Yoshida,  

[Date]1998/5/22
[Paper #]
Effects of sapphire substrate nitridation upon GaN grown layers by MOCVD

T Ito,  H Teshigawara,  M Yanagihara,  K Ohtsuka,  K Kuwahara,  M Sumiya,  Y Takano,  S Fuke,  

[Date]1998/5/22
[Paper #]
Preparation of SiC Thin Film Using Organic Si Material by Remote Plasma CVD Method

Ying-Yu XU,  Takahiro MURAMATSU,  Toru AOKI,  Yoichiro NAKANISHI,  Yoshinori HATANAKA,  

[Date]1998/5/22
[Paper #]
DLTS study of 3C-SiC grown on Si substrates : Defects observable above room temperature

M Kato,  Y Koga,  M Ichimura,  E Arai,  N Yamada,  

[Date]1998/5/22
[Paper #]
Ga composition dependence of Er-related luminescence in Ga_xIn_<1-x>P:Er(0≦x≦1)

T Kawamoto,  T Ito,  M Ichide,  O Watanabe,  I Yamakawa,  Y Fujiwara,  A Nakamura,  Y Takeda,  

[Date]1998/5/22
[Paper #]
Hole Burning Memory Using InAs Self-Assembled Quantum Dots

Yoshihiro Sugiyama,  Yoshiaki Nakata,  Shunichi Muto,  Naoto Horiguchi,  Toshiro Futatsugi,  Yuji Awano,  Naoki Yokoyama,  

[Date]1998/5/22
[Paper #]
H plasma passivation of MOCVD grown GaAs-on-Si

Gang Wang,  Tetsuo Soga,  Takashi Jimbo,  Masayoshi Umeno,  

[Date]1998/5/22
[Paper #]
Study of surface photo-chemical reactions induced by VUV-light

Takanori Hayakawa,  Osamu Hosokawa,  Akitaka Yoshigoe,  Akihiro Wakahara,  Akira Yoshida,  

[Date]1998/5/22
[Paper #]
Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment

Ukyo Mori,  Kana Takigawa,  Yoji Saito,  

[Date]1998/5/22
[Paper #]
Slective etching of native oxide by remote-plasma-excited anhydrous HF

Hirofumi Yamazaki,  Masamitsu Ogasawara,  Yutaka Nakazawa,  Yoji Saito,  

[Date]1998/5/22
[Paper #]
Angle resoleved x-ray photoelectron study on oxynitridation process

Masayuki Suzuki,  Sumiyasu Iguchi,  Yoji Saito,  

[Date]1998/5/22
[Paper #]
A prediction of gate oxid lifetime from the breakdown voltage measured by the voltage ramp method

Y Watanabe,  N Soejima,  T Yoshida,  Y Mitsushima,  

[Date]1998/5/22
[Paper #]
Relation between OSF induced by B Ion lmplantation and Gate Oxide Reliability

Kenji Nakashima,  Yukihiko Watanabe,  Hirofumi Funabashi,  Tomoyuki Yoshida,  Yasuichi Mitsushima,  

[Date]1998/5/22
[Paper #]
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