Electronics-Electron Devices(Date:1998/01/21)

Presentation
表紙

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[Date]1998/1/21
[Paper #]
目次

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[Date]1998/1/21
[Paper #]
Novel Fabrication Technology for Ultra-Compact Three-Dimensional MMICs

Suehiro Sugitani,  Kiyomitsu Onodera,  Shinji Aoyama,  Makoto Hirano,  Kimiyoshi Yamasaki,  

[Date]1998/1/21
[Paper #]ED97-181
Temperture compensation technique of GaAs FET by rotating the gate orientation

H. Furukawa,  T. Tanaka,  H. Ishida,  D. Ueda,  

[Date]1998/1/21
[Paper #]ED97-182
Single Low Voltage supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain Variable Attenuator for 1.9-GHz Personal Handy Phone Systems

Hirotsugu Wakimoto,  Masami Nagaoka,  Toshiki Seshita,  Katsue Kawakyu,  Yoshiko Ikeda,  Kazuya Nishihori,  Yoshiaki Kitaura,  Atsushi Kameyama,  Naotaka Uchitomi,  

[Date]1998/1/21
[Paper #]ED97-183
Power Amplifier MMICs Utilizing SrTiO_3 capacitors For Mobile Communication Systems

Takeshi B. Nishimura,  Naotaka Iwata,  Keiko Yamaguchi,  Masatoshi Tomita,  Koichi Takemura,  Yoichi Miyasaka,  

[Date]1998/1/21
[Paper #]ED97-184
A Low Distortion GaAs Quadrature Modulator IC

Junji ITOH,  Tadayoshi NAKATSUKA,  Yasumi IMAGAWA,  Kimihiko SATO,  Tomoya UDA,  Osamu ISHIKAWA,  

[Date]1998/1/21
[Paper #]ED97-185
Low Distortion Design of High Efficiency Power GaAs FETs for L-band Satellite Communication System Applications

Hiroaki Tsutsui,  Isao Takenaka,  Hidemasa Takahashi,  Kazunori Asano,  Masaaki Kuzuhara,  

[Date]1998/1/21
[Paper #]ED97-186
Ku, K-Band Power HEMT with WSi/Au T-Shaped Gate

T. Kunii,  N. Yoshida,  S. Miyakuni,  T. Shiga,  T. Oku,  A. Inoue,  J. Udomoto,  M. Komaru,  S. Tsuji,  T. Ishikawa,  

[Date]1998/1/21
[Paper #]ED97-187
[OTHERS]

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[Date]1998/1/21
[Paper #]