Electronics-Electron Devices(Date:1996/11/09)

Presentation
表紙

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[Date]1996/11/9
[Paper #]
目次

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[Date]1996/11/9
[Paper #]
Dominant electron trap in LT-GaAs grown by MBE

T. Hashizume,  S. Shiobara,  Y. Ishikawa,  H. Hasegawa,  

[Date]1996/11/9
[Paper #]ED96-120
Study on the reduction of unintentional impurities at the interface between epitaxial layers and GaAs substrate : Effect of substrate pre-treatment and contamination from an atmosphere

Takumi Nittono,  Fumiaki Hyuga,  

[Date]1996/11/9
[Paper #]ED96-121
Selective Anisotropic Etching for GaAs HJFET Fabrication Using Cooled Citric Acid/Hydrogen Peroxide Solutions

Satoru Ohkubo,  Kensuke Kasahara,  Yasuo Ohno,  

[Date]1996/11/9
[Paper #]ED96-122
High Uniformity and High Performance of GaAs/AlGaAs HFETs by Selective Wet Etching

T. Kitano,  H. Totsuka,  T. Kashiwa,  T. Sonoda,  

[Date]1996/11/9
[Paper #]ED96-123
Mechanism of gate leakage current generation in GaAs HIGFET

Shinichiro Takatani,  Hidetoshi Matsumoto,  Junji Shigeta,  Tomoko Yamashita,  Katsushi Oshika,  Munetoshi Fukui,  

[Date]1996/11/9
[Paper #]ED96-124
Correlation between Stoichiometry and Gate Breakdown in GaAs MESFET'd

Yosuke Miyoshi,  Michihisa Kohno,  Yasunobu Nashimoto,  Masashi Mizuta,  

[Date]1996/11/9
[Paper #]ED96-125
A Low Distortion GaAs Attenuator IC Using Short Channel Effect of MESFET

Kazuo Miyatsuji,  Daisuke Ueda,  

[Date]1996/11/9
[Paper #]ED96-126
[OTHERS]

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[Date]1996/11/9
[Paper #]