Electronics-Electron Devices(Date:1996/05/24)

Presentation
表紙

,  

[Date]1996/5/24
[Paper #]
目次

,  

[Date]1996/5/24
[Paper #]
Thermal decomposition of MOVPE-grown-GaN films at high temperature

Hisayoshi Hanai,  Hidetada Matsushima,  Kazumasa Hiramatsu,  Nobuhiko Sawaki,  

[Date]1996/5/24
[Paper #]ED96-29,CPM96-14
MOVPE growth and properties of InGaN

Masaya Shimizu,  Yasutoshi Kawaguchi,  Kazumasa Hiramatsu,  Nobuhiko Sawaki,  

[Date]1996/5/24
[Paper #]ED96-30,CPM96-15
Fabrication of GaInN-based multi-layered structure grown by NBE

Hiromitsu Sakai,  Machiko Yamaguchi,  Hiroyuki Suzuki,  Takashi Koide,  Hiroshi Amano,  Isamu Akasaki,  

[Date]1996/5/24
[Paper #]ED96-31,CPM96-16
Light Emitting Devices Based on Group III nitride Quantum Well Active Layer

Shigetoshi Sota,  Masato Yoshida,  Masaki Nishikawa,  Makoto Kawaguchi,  Masahiro Ohta,  Hiroshi Amano,  Isamu Akasaki,  

[Date]1996/5/24
[Paper #]ED96-32,CPM96-17
Study of buffer layer deposition conditions for GaN growth by MOCVD

T. Ito,  M. Yanagihara,  K. Ohtuka,  K. Kuwahara,  T. Imai,  Y. Takano,  S. Fuke,  

[Date]1996/5/24
[Paper #]ED96-33,CPM96-18
Influence of initial growth conditions upon the polarity of GaN layer grown on (0001)Al_2O_3

H. Teshigawara,  T. Ito,  M. Yanagihara,  K. Ohtuka,  T. Imai,  K. Kuwahara,  Y. Takano,  S. Fuke,  

[Date]1996/5/24
[Paper #]ED96-34,CPM96-19
Epitaxial Growth of InN on Nitrided Substrates

Osamu Miki,  Kouji Shimada,  Hisao Saiki,  Hirofumi Yamano,  Akira Yoshida,  

[Date]1996/5/24
[Paper #]ED96-35,CPM96-20
Systematic approach in LSI technology Development : Importance of Common Engineering Bases Establishment

EISUKE ARAI,  

[Date]1996/5/24
[Paper #]ED96-36,CPM96-21
High efficiency tandem solar cells of compound semiconductors/silicon

Takuya SHIRAISHI,  K. BASKAR,  Tosimichi KATO,  Tetsuo SOGA,  Takashi JIMBO,  Masayoshi UMENO,  

[Date]1996/5/24
[Paper #]ED96-37,CPM96-22
Low-Temperature Epitaxial Growth of Si by ECR Plasma CVD Technique

Kimihiro SASAKI,  Hideyuki TOMODA,  Tomonobu HATA,  

[Date]1996/5/24
[Paper #]ED96-38,CPM96-23
Characterization of bonded SOI wafers by the N_2-laser/microwave method

M. Ichimura,  H. Asakura,  T. Makino,  A. Usami,  E. Morita,  

[Date]1996/5/24
[Paper #]ED96-39,CPM96-24
Study on Heteroepitaxially Grown Semiconductor Interfaces by X-ray CTR Measurement Using Conventional X-ray Source

M. TABUCHI,  N. MATSUMOTO,  Y. TAKEDA,  

[Date]1996/5/24
[Paper #]ED96-40,CPM96-25
Evaluation of crystallinity by atomic force microscopy (AFM) in air

Tsuyoshi Ito,  Yuki Yoshida,  Koji Shimasaki,  Mitsuhiro Adachi,  Hideo Uchida,  Takashi Egawa,  Takashi Jimbo,  Masayoshi Umeno,  

[Date]1996/5/24
[Paper #]ED96-41,CPM96-26
Epitaxial Growth of YSZ Films on Si(100) Substrate by Reactive Sputtering

Hirokazu Okada,  Ryo ANDO,  Kimihiro SASAKI,  Tomonobu HATA,  

[Date]1996/5/24
[Paper #]ED96-42,CPM96-27
[OTHERS]

,  

[Date]1996/5/24
[Paper #]