Electronics-Electron Devices(Date:1996/05/23)

Presentation
表紙

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[Date]1996/5/23
[Paper #]
目次

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[Date]1996/5/23
[Paper #]
Bulk crystal growth of InGaAs ternary mixed semiconducters

T. Ozawa,  H. Ono,  Y. Ohnishi,  T. Koyama,  Y. Hayakawa,  M. Kumagawa,  

[Date]1996/5/23
[Paper #]ED96-16,CPM96-1
The permeation mechanism of Ga into Insb

H. Ohtsu,  E. Hamakawa,  M. Masaki,  K. Takahashi,  T. Koyama,  Y. Hayakawa,  M. Kumagawa,  

[Date]1996/5/23
[Paper #]ED96-17,CPM96-2
Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by Liquid Phase Epitaxy

S. IIDA,  T. SAKURAI,  H. YANAGIDA,  T. KOYAMA,  Y. HAYAKAWA,  M. KUMAGAWA,  

[Date]1996/5/23
[Paper #]ED96-18,CPM96-3
Suppression of twins in GaAs layers grown on a GaP substrate by liquid phase epitaxy

Akira Tanaka,  Haruhiko Udono,  Masakazu Kimura,  Tokuzo Sukegawa,  

[Date]1996/5/23
[Paper #]ED96-19,CPM96-4
LPE growth of ZnSe using zinc chloride solvent

Fumiyasu KADOTSUJI,  Tomiyuki TSUJIMOTO,  Masanori KAJI,  Masakazu KIMURA,  Akira TANAKA,  Tokuzo SUKEGAWA,  

[Date]1996/5/23
[Paper #]ED96-20,CPM96-5
Influence of the annealing atmosphere on electrochemically deposited CdS thin films

Fumitaka Goto,  Katsunori Shirai,  Yukihisa Moriguchi,  Masaya Ichimura,  

[Date]1996/5/23
[Paper #]ED96-21,CPM96-6
Preparation of Chalcopyrite Thin Films by Laser Ablation

T. Tanaka,  N. Tanahashi,  Y. Demizu,  Y. Yamamoto,  T. Yamaguchi,  A. Yoshida,  

[Date]1996/5/23
[Paper #]ED96-22,CPM96-7
Growth Characteristics of CdZnTe Layers Grown by Metalorganic Vapor Phase Epitaxy using Diisopropylzinc

Hironobu Maeba,  Koji Kawaguchi,  Hisanori Kihara,  Yoshitaka Kubota,  Katsuyoshi Kojima,  Katsuhiro Mori,  Kazuhito Yasuda,  

[Date]1996/5/23
[Paper #]ED96-23,CPM96-8
Iodine doping of CdTe layers grown by low-temperature metalorganic vapor phase epitaxy

Koji Kawaguchi,  Hironobu Maeba,  Yoshitaka Kubota,  Katsuyoshi Kojima,  Katsuhiro Mori,  Hisanori Kihara,  Kazuhito Yasuda,  

[Date]1996/5/23
[Paper #]ED96-24,CPM96-9
Metal adsorption and initial stage of thin films grown by VUV-light excitation

Osamu Hosokawa,  Koji Maeda,  Ashtosh Ganjoo,  Akira Yoshida,  

[Date]1996/5/23
[Paper #]ED96-25,CPM96-10
Theoretical Studies on Photo-excited Growth of II-VI Compound Semiconductors

Akira Yoshida,  Yuji Matsuda,  

[Date]1996/5/23
[Paper #]ED96-26,CPM96-11
Preparation and properties of amorphous carbon nitride a-CN_x

N. Takada,  S. Nitta,  S. Nonomura,  

[Date]1996/5/23
[Paper #]ED96-27,CPM96-12
Preparation and properties of amorphous gerumanium nitride a-Ge_<1-x>N_x : H

M. Hioki,  S. Nitta,  S. Nonomura,  

[Date]1996/5/23
[Paper #]ED96-28,CPM96-13
[OTHERS]

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[Date]1996/5/23
[Paper #]