Electronics-Electron Devices(Date:1996/01/18)

Presentation
表紙

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[Date]1996/1/18
[Paper #]
目次

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[Date]1996/1/18
[Paper #]
Novel sub-quarter micron GaAs MESFET process with WSi sidewall gate

Tomoya Uda,  Mitsuru Nishitsuji,  Katsunori Nishii,  Kazuhisa Fujimoto,  Akiyoshi Tamura,  

[Date]1996/1/18
[Paper #]ED95-151,MW95-136,ICD95-207
Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors

Shigeharu Matsushita,  Emi Fujii,  Daijiro Inoue,  Seiichi Banba,  Kohji Matsumura,  Minoru Sawada,  Yasoo Harada,  

[Date]1996/1/18
[Paper #]ED95-152,MW95-137,ICD95-208
Numerical Analysis of Drain Lag Phenomena in HJFETs on Hole-Trap Substrates

Masanobu Nogome,  Kazuaki Kunihiro,  Yasuo Ohno,  

[Date]1996/1/18
[Paper #]ED95-153,MW95-138,ICD95-209
Development of Graded-GaAsP Bases in Heterojunction Bipolar Transistors

N lkeda,  M Ohkubo,  T Ninomiya,  

[Date]1996/1/18
[Paper #]ED95-154,MW95-139,ICD95-210
Ultra-High-Speed InP/InGaAs Double Heterojunction Bipolar Transistors with a New Hexagonal-Shaped Emitter

S Yamahata,  K Kurishima,  N Shigekawa,  H Ito,  Y Matsuoka,  

[Date]1996/1/18
[Paper #]ED95-155,MW95-140,ICD95-211
An ultra-compact and super low-noise GaAs MMIC amplifier for L-band

Tetsuro Sawai,  Masao Nishida,  Toshikazu Hirai,  Tsutomu Yamaguchi,  Shigeyuki Murai,  Yasoo Harada,  

[Date]1996/1/18
[Paper #]ED95-156,MW95-141,ICD95-212
The Wideband Low Distortion Amplifier Using Gallium Arsenide

Yoshiaki FUKASAWA,  Yuuji KAKUTA,  Yoshiaki WAKABAYASHI,  Yasuhiro SHIRAKAWA,  Kazuya KlTAMURA,  Yoshitake Asano,  

[Date]1996/1/18
[Paper #]ED95-157,MW95-142,ICD95-213
1.9GHz band low voltage operation GaAs MMIC Power Amplifier

Akishige Nakajima,  Toru Fujioka,  Eiichi Hase,  Isao Arai,  Masao Yamane,  

[Date]1996/1/18
[Paper #]ED95-158,MW95-143,ICD95-214
A Design Method of an X-band Miniaturized MMIC Amplifier Considering a Coupling between Lines

Shin CHAKl,  Yoshihiro TSUKAHARA,  Hiroto MATSUBAYASHI,  Naoto ANDOH,  Yoshinobu SASAKI,  Tadashi TAKAGI,  

[Date]1996/1/18
[Paper #]ED95-159,MW95-144,ICD95-215
A GaAs AGC Amplifier for CDMA Cellular Phone Systems

Masaaki Kasashima,  Koutarou Tanaka,  Hiroshi Nakamura,  Hefeng Wang,  Tsutomu Katsuyama,  

[Date]1996/1/18
[Paper #]ED95-160,MW95-145,ICD95-216
Time-domain Design Method of 10GHz HBT Stable Oscillation Multivibrator VCO

K Sakita,  Y Watanabe,  

[Date]1996/1/18
[Paper #]ED95-161,MW95-146,ICD95-217
Detection Characteristics of Even Harmonic Type Direct Converter

Mitsuhiro SIMOZAWA,  Kenji KAWAKAMI,  Kenji ITOH,  Akio IIDA,  

[Date]1996/1/18
[Paper #]ED95-162,MW95-147,ICD95-218
A GaAs Direct-Conversion 1/4π shifted QPSK Modulator IC with 0-28 dB variable Attenuator for 1.9 GHz Personal Handy Phone System

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[Date]1996/1/18
[Paper #]ED95-163,MW95-148,ICD95-219
3.4V Operation Power Amplifier Multi-chip IC's for Digital Cellular Phone

yasuaki Hasegawa,  yukinori Ogata,  keiko Yamaguchi,  naotaka Iwata,  mikio kanamori,  tomohiro Itoh,  

[Date]1996/1/18
[Paper #]ED95-164,MW95-149,ICD95-220
[OTHERS]

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[Date]1996/1/18
[Paper #]