Electronics-Electron Devices(Date:1996/01/17)

Presentation
表紙

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[Date]1996/1/17
[Paper #]
目次

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[Date]1996/1/17
[Paper #]
1.5V-Operation GaAs Spike-gate Power FET with 70% Power-added Efficiency

Tsuyoshi Tanaka,  Hidetoshi Furukawa,  Hiroshi Takenaka,  Tetsuzo Ueda,  Atsushi Noma,  Takeshi Fukui,  Kazuki Tateoka,  Daisuke Ueda,  

[Date]1996/1/17
[Paper #]ED95-145,MW95-130,ICD95-201
1.2V Operation 1.1W Heterojunction FETs

Keiko Yamaguchi,  Naotaka Iwata,  Masaaki Kuzuhara,  

[Date]1996/1/17
[Paper #]ED95-146,MW95-131,ICD95-202
Millimeter-wave Power HBTs with Lateral p^+/p Base Contacts

Yasushi Amamiya,  Hidenori Shimawaki,  Chang Woo Kim,  Shin'ichi Tanaka,  Seiichi Murakami,  Naoki Furuhata,  Masayuki Mamada,  Norio Goto,  Kazuhiko Honjo,  

[Date]1996/1/17
[Paper #]ED95-147,MW95-132,ICD95-203
InGaP/GaAs Power HBTs with a Low Bias Voltage

S Ohara,  H Yamada,  T Iwai,  Y Yamaguchi,  K Imanishi,  K Joshin,  

[Date]1996/1/17
[Paper #]ED95-148,MW95-133,ICD95-204
A PROSPECT OF mm-WAVE SEMICONDUCTOR

Asamitsu HIGASHISAKA,  

[Date]1996/1/17
[Paper #]ED95-149,MW95-134,ICD95-205
ミリ波応用技術と実用化への課題

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[Date]1996/1/17
[Paper #]ED95-150,MW95-135,ICD95-206
[OTHERS]

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[Date]1996/1/17
[Paper #]