Electronics-Electron Devices(Date:1995/10/20)

Presentation
表紙

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[Date]1995/10/20
[Paper #]
目次

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[Date]1995/10/20
[Paper #]
Mg Ion Implantation Technique for High Performance p-Channel Heterostructure FET

N. Hara,  H. Suehiro,  Y. Matsukura,  M. Shima,  S. Kuroda,  

[Date]1995/10/20
[Paper #]ED95-103
Sub-quarter micron gate AlGaAs/InGaAs HEMT using UV lithography

Toshinobu Matsuno,  Mitsuru Tanabe,  Manabu Yanagihara,  Hiroyuki Sakai,  Akiyoshi Tamura,  Kaoru Inoue,  

[Date]1995/10/20
[Paper #]ED95-104
Thermal Stability of InAlAs/InGaAs HJFETs with an In(Al_<1-x>Ga_x)As Layer

A. Fujihara,  T. Nakayama,  E. Mizuki,  A. Wakejima,  Y. Ando,  K. Onda,  H. Miyamoto,  M. Kuzuhara,  

[Date]1995/10/20
[Paper #]ED95-105
Fabrication and characterization of insulated gate InGaAs HEMT using Si interface controllayer

S. Suzuki,  Y. Doumae,  H. Hasegawa,  

[Date]1995/10/20
[Paper #]ED95-106
Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates

Takuma Tanimoto,  Isao Ohbu,  Satoshi Tanaka,  Hidetoshi Matsumoto,  Akihisa Terano,  M. Kudo,  Tohru Nakamura,  

[Date]1995/10/20
[Paper #]ED95-107
Fluorine passivation of AlInAs/InGaAs/InP system : Material dependence

N. Hayafuji,  Y. Yamamoto,  T. Sonoda,  S. Takamiya,  

[Date]1995/10/20
[Paper #]ED95-108
Effects of thermal heating on GaAs(001) surface prepared by DODIW treatment

Y. Hirota,  T. Fukuda,  K. Sumitomo,  

[Date]1995/10/20
[Paper #]ED95-109
Self-Aligned InP/InGaAs HBTs using T-Shaped Emitter Electrodes with Thermally Stable base electrodes

Hiroshi Masuda,  Tohru Oka,  Kiyoshi Ouchi,  Akihisa Terano,  Hirokazu Matsubara,  Teruo Mozume,  Tomonori Tanoue,  

[Date]1995/10/20
[Paper #]ED95-110
Transient Response of Current Gain Collapse in Multi-finger HBTs

H. Matsubayashi,  T. Shimura,  Y. Nakajima,  T. Takagi,  O. Ishihara,  

[Date]1995/10/20
[Paper #]ED95-111
Application of GaAs Fine Structures to a STM Tip

Satoshi Tada,  Koichi Yamaguchi,  

[Date]1995/10/20
[Paper #]ED95-112
Quantum Devices Having Schottky In-Plane Gate Structure

Hiroshi Okada,  Kei-ichiroh Jinushi,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1995/10/20
[Paper #]ED95-113
Possibility of roughness control by growth interruputions at GaInAs/InP heterointerface grown by OMVPE

Michihiko Suhara,  Chuma Nagao,  Hidetaka Honji,  Yasuyuki Miyamoto,  Kazuhito Furuya,  

[Date]1995/10/20
[Paper #]ED95-114
InP-based Resonant Tunneling Diode with a Cathode-Well Structure

Takayuki Nakagawa,  Takaya Nakano,  Kanji Yoh,  

[Date]1995/10/20
[Paper #]ED95-115
[OTHERS]

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[Date]1995/10/20
[Paper #]