Electronics-Electron Devices(Date:1995/05/18)

Presentation
表紙

,  

[Date]1995/5/18
[Paper #]
目次

,  

[Date]1995/5/18
[Paper #]
Growth and characterization of Er-doped InP by OMVPE with TBP

N. Matsubara,  Y. Ito,  Y. Nonogaki,  K. Fujita,  Y. Fujiwara,  Y. Takeda,  

[Date]1995/5/18
[Paper #]
Study of MOCVD-grown InAlAs/InGaAs HEMT structures with Fe-doped InP buffer layers

T. Noda,  A. Sasaki,  C. Nozaki,  M. Amano,  Y. Ashizawa,  

[Date]1995/5/18
[Paper #]
MBE growth of GaAs on misoriented substrates

Y. Uneme,  S. Izumi,  N. Hayafuji,  T. Sonoda,  S. Takamiya,  

[Date]1995/5/18
[Paper #]
Theoretical Models of Critical Thickness of Dislocation Nucleation in Heterostructures

M. Ichimura,  J. Narayan,  

[Date]1995/5/18
[Paper #]
Lattice relaxaton process of a (GaAs)_m(GaP)_n strained short-period superlattice

Y. Takagi,  K. Samonji,  K. Iwaki,  N. Ohshima,  K. Pak,  H. Yonezu,  

[Date]1995/5/18
[Paper #]
Reduction of threading dislocation density in InP-on-Si with strained short-period superlattices

K. Samonji,  Y. Takagi,  K. Hayashida,  N. Ohshima,  K. Pak,  H. Yonezu,  

[Date]1995/5/18
[Paper #]
[OTHERS]

,  

[Date]1995/5/18
[Paper #]