Electronics-Electron Devices(Date:1994/10/11)

Presentation
表紙

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[Date]1994/10/11
[Paper #]
目次

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[Date]1994/10/11
[Paper #]
Thermally stable GaAs Schottky contacts using double layered WSiN

Kenji Shiojima,  Kazumi Nishimura,  Masami Tokumitsu,  Takumi Nittono,  Hirohiko Sugawara,  Fumiaki Hyuga,  

[Date]1994/10/11
[Paper #]ED94-66
Modulation of FET Operation by Carrier Trapping at the WSi/GaAs Shottky Contacts

Ryo Hattori,  Takako Kitamura,  Kazuhiko Sato,  Osamu Ishihara,  

[Date]1994/10/11
[Paper #]ED94-67
Surface Passivation of Compound Semiconductor Quantum Well Structure Using Silicon Interface Control Layer

Satoshi Kodama,  Satoshi Koyanagi,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1994/10/11
[Paper #]ED94-67
Effect of AlAs surface reconstruction on properties of Ge on AlAs

Takeshi Maeda,  Hitoshi Tanaka,  Masahiko Takikawa,  Kazumi Kasai,  

[Date]1994/10/11
[Paper #]ED94-69
Fine Patterning for Sub-quarter Micron Gate GaAs MESFET

Tamotsu Kimura,  Tomoyuki Ohshima,  

[Date]1994/10/11
[Paper #]ED94-70
0.1-μm Au/WSiN Gate GaAs MESFET's Having new BP-LDD structure

Kazumi Nishimura,  Masami Tokumitsu,  Makoto Hirano,  Shinji Aoyama,  Yasuro Yamane,  Kimiyoshi Yamasaki,  

[Date]1994/10/11
[Paper #]ED94-71
A WSi/W self-aligned gate FET for high power amplifier with low voltage supply

Nobuyuki Kasai,  Kazuhiko Ito,  Shinichi Miyakuni,  Kosei Maemura,  Kazuya Yamamoto,  Hirozo Takano,  

[Date]1994/10/11
[Paper #]ED94-72
GaAs Power FET with Cr-diffusion Setback Layer under the Gate

Hidetoshi Furukawa,  Kazuki Tateoka,  Kazuo Miyatsuji,  Akihisa Sugimura,  Daisuke Ueda,  

[Date]1994/10/11
[Paper #]ED94-73
Highly reliable and high performance InAlAs/InGaAs HJFET

Akira Fujihara,  Kazuhiko Onda,  Emiko Mizuki,  Hironobu Miyamoto,  Yasuko Hori,  Masaaki Kuzuhara,  

[Date]1994/10/11
[Paper #]ED94-74
Highly strained InGaAs channel HEMTs on GaAs substrates grown by MBE

Makoto Kudou,  Tomoyoshi Mishima,  

[Date]1994/10/11
[Paper #]ED94-75
Nanostructure Aignment for hot electron intereferance/diffraction devices

Hiroo Hongo,  Jun Suzuki,  Michihiko Suhara,  Yasuyuki Miyamoto,  Kazuhito Furuya,  

[Date]1994/10/11
[Paper #]ED94-76
Direct Schottky contacts to the edge of quantum well and its application to wire transistor.

Hiroshi Okada,  Kei-ichiroh Jinushi,  Nan-Jian Wu,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1994/10/11
[Paper #]ED94-76
Control of GaAs Schottky Barrier Height by Si Interface Control Layer and its Application for Quntum Structures

Seiya Kasai,  Syo-ichi Uno,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1994/10/11
[Paper #]ED94-78
[OTHERS]

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[Date]1994/10/11
[Paper #]