Electronics-Electron Devices(Date:1994/05/20)

Presentation
表紙

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[Date]1994/5/20
[Paper #]
目次

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[Date]1994/5/20
[Paper #]
Growth characteristics of HgCdTe layers grown by MOVPE at low temperature

Hiroki Hatano,  Kazuhiro Kawamoto,  Masaya Minamide,  Takayuki Maejima,  Touati Ferid,  Kazuhito Yasuda,  

[Date]1994/5/20
[Paper #]ED94-16,CPM94-17
Thermal annealing effects of Er lumnescence centers in Er doped Si

Hironori Ohwaki,  Osamu Iioka,  Hideo Minami,  Osamu Eryu,  Kensiro Nakashima,  

[Date]1994/5/20
[Paper #]ED94-17,CPM94-18
Redistribution of Er atoms in Si during Laser Doping

Osamu Eryu,  Hironori Ohwaki,  Kenshirou Nakashima,  

[Date]1994/5/20
[Paper #]ED94-18,CPM94-19
Excimer Laser Doping of Erbium Adsorbed in Porus Silicon Structure

Kenshiro Nakashima,  Osamu Eryuu,  Naoki Ikeuchi,  Hironori Oowaki,  

[Date]1994/5/20
[Paper #]ED94-19,CPM94-20
Stable Harmonic Mode-Locking of Fiber Ring Lasers

Brahm Pal Singh,  Tetsuo Tazaki,  Koji Ieda,  Masakazu Mori,  Toshio Goto,  Akira Miyauchi,  

[Date]1994/5/20
[Paper #]ED94-20,CPM94-21
Fabrication of AlGaAs/GaAs Double-Hetero structure LD on GaAs(lll) A Substrate

Yutaka Niwano,  Takashi Egawa,  Kazuhisa Fujita,  Kohichi Nitatori,  Toshihide Watanabe,  Takashi Jimbo,  Masayoshi Umeno,  

[Date]1994/5/20
[Paper #]ED94-21,CPM94-22
Improvement of crystalline quallity in regrown GaAs on AlGaAs using a novel two-step HCl gas etching process

Hirotaka Kizuki,  Nariaki Fujii,  Motoharu Miyashita,  Yutaka Mihashi,  Sabro Takamiya,  

[Date]1994/5/20
[Paper #]ED94-22,CPM94-23
Growth mode transition in GaAs/GaP(001)

Takashi Nomura,  Masahiro Yoshikawa,  Kenji Ishikawa,  Minoru Hagino,  

[Date]1994/5/20
[Paper #]ED94-23,CPM94-24
Consecutive growth of Ge/GaAs from Ga-As-Ge solution

Toshiyuki Kamiya,  Masakazu Kimura,  Akira Tanaka,  Tokuzo Sukegawa,  

[Date]1994/5/20
[Paper #]ED94-24,CPM94-25
The conversion of LPE GaAs on GaP to GaAsP(II)

Haruhiko Udono,  Atsushi Motogaito,  Hironobu Katsuno,  Masakazu Kimura,  Akira Tanaka,  Tokuzo Sukegawa,  

[Date]1994/5/20
[Paper #]ED94-25,CPM94-26
Reduction of the surface recombination velocity of GaAs by Si^+ implantation -By using the non-contact laser/microwave evaluation method-

Hideaki Yoshida,  Yasuo Okuyama,  Masaya Ichimura,  Akira Usami,  Takao Wada,  

[Date]1994/5/20
[Paper #]ED94-26,CPM94-27
Electrical effects of growth interruption in Liquid-Phase Epitaxial Al_xGa_1-x>Sb

Hiroyasu Ogino,  Masaya Ichimura,  Akira Usami,  Takao Wada,  

[Date]1994/5/20
[Paper #]ED94-27,CPM94-28
Nondestructive Depth Profiling Using Soft X-ray Emission Spectroscopy -Study of Ni-silicide/Si hetero contact system-

Shoichi Yamauchi,  Motohiro Iwami,  Hisayoshi Ohshima,  Tadashi Hattori,  

[Date]1994/5/20
[Paper #]ED94-28,CPM94-29
[OTHERS]

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[Date]1994/5/20
[Paper #]