Electronics-Electron Devices(Date:1993/10/22)

Presentation
表紙

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[Date]1993/10/22
[Paper #]
目次

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[Date]1993/10/22
[Paper #]
[CATALOG]

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[Date]1993/10/22
[Paper #]
Stability of the dimer structure formed on Si(100)agaist air- exposure

Masao Sakuraba,  Junichi Murota,  Shoichi Ono,  

[Date]1993/10/22
[Paper #]ED93-105
B doped Si_1-x>Ge_x film growth using ultraclean CVD

Fumitaka Honma,  Kinya Goto,  Takahiro Maeda,  Junichi Murota,  Yasuji Sawada,  

[Date]1993/10/22
[Paper #]ED93-106
Cleaning of GaAs and InP surfaces by atomic hydrogen beam at low temperature

Takeshi Kikawa,  Isao Ochiai,  Shinichiro Takatani,  

[Date]1993/10/22
[Paper #]ED93-107
Low ion energy ECR etching of InP using Cl_2/N_2 mixture.

Shinichi Miyakuni,  Ryo Hattori,  Kazuhiko Sato,  

[Date]1993/10/22
[Paper #]ED93-108
Fabrication of Pillar-type Microcavity Lasers by Using Dry Etching Techniques.-Discussion of the etching of AlAs/AlGaAs multilayer structures-

Shin-ya Nunoue,  Tsutomu Tezuka,  Haruhiko Yoshida,  Tohoru Nishibe,  Takao Noda,  Masaru Nakamura,  

[Date]1993/10/22
[Paper #]ED93-109
Plasma-assisted epitaxial growth of N-doped ZnSe

Fumitoshi Ito,  Tomoji Hamada,  Takashi Hariu,  Shouichi Ono,  Masashi Suezawa,  

[Date]1993/10/22
[Paper #]ED93-110
[OTHERS]

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[Date]1993/10/22
[Paper #]