Electronics-Electron Devices(Date:1993/10/21)

Presentation
表紙

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[Date]1993/10/21
[Paper #]
目次

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[Date]1993/10/21
[Paper #]
Theoretical Analysis of a Corner Cube Schottky Diode Mixer in the Millimeter and Submillimeter Wave Region

Tetsu Suzuki,  Tatsuo Nozokido,  Christpher M. Mann,  Jinji Tyan,  Yoshihiro Kuwano,  Koji Mizuno,  

[Date]1993/10/21
[Paper #]ED93-96
Fabrication Technology for ion-implanted 0.1-μm Au/WSiN Gate GaAs MESFET-IC

Kazumi Nishimura,  Kou Inoue,  Yasuro Yamane,  Masami Tokumitsu,  

[Date]1993/10/21
[Paper #]ED93-97
Study on Highly Reliable Mo Gate Electrodes for InAlAs/InGaAs FET′ s

Akira Fujihara,  Kazuhiko Onda,  Hironobu Miyamoto,  Norihiko Samoto,  Masaaki Kuzuhara,  

[Date]1993/10/21
[Paper #]ED93-98
Highly selective etching of GaAs/AlGaAs hetero structures with citric acid-based etchats.

Toshiaki Kitano,  Shigekazu Izumi,  Yoshito Seiwa,  Hirozou Takano,  

[Date]1993/10/21
[Paper #]ED93-99
In-situ patterning of GaAs by EB-enhanced ges etching using a MBE- grown InAs film as a mask.

Takashi Yoshida,  Yutaka Kadoya,  Shinji Miya,  Hiroshi Noge,  Hiroyuki Sakaki,  

[Date]1993/10/21
[Paper #]ED93-100
Ultrafine fabrication technique for hot electron interference/ difraction devices

Hiroo Hongo,  Yasuyuki Miyamoto,  Jun Suzuki,  Miyako Funayama,  Kazuhito Furuya,  

[Date]1993/10/21
[Paper #]ED93-101
Fabrication of AlGaAs/GaAs multi-quantum wires structure

Shin-ichi Watabayashi,  Hitomaro Tougou,  Tadashi Narusawa,  Yukio Toyoda,  

[Date]1993/10/21
[Paper #]ED93-102
Transport properties of AlGaAs/GaAs buried wires and analysis of confinement potential

Shunji Nakata,  Kenji Ikuta,  Masafumi Yamamoto,  Takashi Mizutani,  Masaaki Tomizawa,  

[Date]1993/10/21
[Paper #]ED93-103
Epitaxial growth of InSb on Si

Hirofumi Ohba,  Takashi Haryuu,  Shoichi Ono,  

[Date]1993/10/21
[Paper #]ED93-104
[OTHERS]

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[Date]1993/10/21
[Paper #]