Electronics-Component Parts and Materials(Date:2022/11/24)

Presentation
CVD growth of two-dimensional g-C3N4/SnS2/graphene hetero structure

Youhei Mori(Shizuoka Univ),  Kota Matsuoka(Shizuoka Univ),  Baskar Malathi(Shizuoka Univ),  Atsushi Nakamura(Shizuoka Univ),  

[Date]2022-11-24
[Paper #]ED2022-26,CPM2022-51,LQE2022-59
Synthesis of g-C3N4/SnS2 composites for artificial photosynthesis application

Matsuoka Kota(Shizuoka Univ.),  Mori Youhei(Shizuoka Univ.),  Baskar Malathi(Shizuoka Univ.),  Nakamura Atsushi(Shizuoka Univ.),  

[Date]2022-11-24
[Paper #]ED2022-27,CPM2022-52,LQE2022-60
Fabrication and device characteristics of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate

SakuraTanaka(Nagoya Inst. Tech.),  Tomoyuki Kawaide(Nagoya Inst. Tech.),  Akiyoshi Inoue(Nagoya Inst. Tech.),  Takashi Egawa(Nagoya Inst. Tech.),  Makoto Miyoshi(Nagoya Inst. Tech.),  

[Date]2022-11-24
[Paper #]ED2022-35,CPM2022-60,LQE2022-68
Voltage-Current Characteristics and Optical Responses of PEDOT:PSS/ZnO Nanorods/GZO Heterojunctions

Tomoaki Terasako(Ehime Univ),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2022-11-24
[Paper #]ED2022-25,CPM2022-50,LQE2022-58
Development of Flexible and Conductive Nanocarbon-based Fibers by Wet Spinning Method

Hikaru Kondo(NIT),  Haruka Jin(NIT),  Rena Kato(NIT),  Tetsuo Soga(NIT),  Naoki Kishi(NIT),  

[Date]2022-11-24
[Paper #]ED2022-31,CPM2022-56,LQE2022-64
Development of haptic gloves for communication

Ryuhei Takeda(Shizuoka Univ.),  Atsushi Nakamura(Shizuoka Univ.),  Kamen Kanev(Shizuoka Univ.),  

[Date]2022-11-24
[Paper #]ED2022-29,CPM2022-54,LQE2022-62
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement

Taiki Nishida(Saga Univ.),  Toshiyuki Oishi(Saga Univ.),  Tomohiro Otsuka(Mitsubishi Elec. Corp.),  Yutaro Yamaguchi(Mitsubishi Elec. Corp.),  Shintaro Shinjo(Mitsubishi Elec. Corp.),  Koji Yamanaka(Mitsubishi Elec. Corp.),  

[Date]2022-11-24
[Paper #]ED2022-34,CPM2022-59,LQE2022-67
Visualization of electric field concentration on Ni/n-GaN Schottky contacts under applying voltage by using scanning internal photoemission microscopy

Hiroki Imabayashi(Univ. of Fukui),  Fumimasa Horikiri(Sumitomo Chemical Co, Ltd.),  Yoshinobu Narita(Sumitomo Chemical Co, Ltd.),  Noboru Fukuhara(Sumitomo Chemical Co, Ltd.),  Tomoyoshi Mishima(Hosei Univ.),  Kenji Shiojima(Univ. of Fukui),  

[Date]2022-11-24
[Paper #]ED2022-33,CPM2022-58,LQE2022-66
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films

Masahide Shimura(Nitech),  Koji Abe(Nitech),  

[Date]2022-11-24
[Paper #]ED2022-28,CPM2022-53,LQE2022-61
Low-resistivity Al-doped ZnO transparent conductive films deposited by sol-gel method

Koji Abe(NITech),  Tasuku Kubota(NITech),  

[Date]2022-11-24
[Paper #]ED2022-30,CPM2022-55,LQE2022-63
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs

Keitaro Toda(NITech),  Toshiharu Kubo(NITech),  Takashi Egawa(NITech),  

[Date]2022-11-24
[Paper #]ED2022-37,CPM2022-62,LQE2022-70
AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice

Takaya Koike(NIT),  Koki Hayashi(NIT),  Ryosuke Hayafuji(NIT),  Toshiharu Kubo(NIT),  Takashi Egawa(NIT),  

[Date]2022-11-24
[Paper #]ED2022-38,CPM2022-63,LQE2022-71
Fabrication of MgSnO thin film using sol-gel method for SnS/MgSnO thin film solar cell

Kengo Inagaki(Shizuoka Univ.),  Yasushi Takano(Shizuoka Univ.),  Keito Shioda(Shizuoka Univ.),  

[Date]2022-11-24
[Paper #]ED2022-32,CPM2022-57,LQE2022-65
Effects of AlN/AlGaN interfacial control layers in AlN/AlGaN/GaN MIS devices

Yuchen Deng(JAIST),  Hibiki Anaba(JAIST),  Hideyuki Matsuyama(JAIST),  Toshi-kazu Suzuki(JAIST),  

[Date]2022-11-24
[Paper #]ED2022-39,CPM2022-64,LQE2022-72
Application of Chemical Bath Deposited ZnO Nanorods to UV Light Detectors and Influence of CBD Solution Concentration on Their Device Properties

Taichi Fujikawa(Ehime Univ.),  Tomoaki Terasako(Ehime Univ.),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2022-11-24
[Paper #]ED2022-24,CPM2022-49,LQE2022-57
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs

Yusuke Iida(NITech),  Akira Mase(NITech),  Masaya Takimoto(NITech),  Yutaka Nikai(NITech),  Takashi Egawa(NITech),  Makoto Miyoshi(NITech),  

[Date]2022-11-24
[Paper #]ED2022-36,CPM2022-61,LQE2022-69
Growth temperature dependence of semipolar {11-22} AlInN/GaInN

Takahiro Fujisawa(Nagoya Inst. Tech.),  Taiki Nakabayashi(Nagoya Inst. Tech.),  Takashi Egawa(Nagoya Inst. Tech.),  Makoto Miyoshi(Nagoya Inst. Tech.),  Tetsuya Takeuchi(Meijo Univ.),  Narihito Okada(Yamaguchi Univ.),  Kazuyuki Tadatomo(Yamaguchi Univ.),  

[Date]2022-11-25
[Paper #]ED2022-42,CPM2022-67,LQE2022-75
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method

Yoshinobu Matsuda(Kyoto Univ.),  Mitsuru Funato(Kyoto Univ.),  Yoichi Kawakami(Kyoto Univ.),  

[Date]2022-11-25
[Paper #]ED2022-43,CPM2022-68,LQE2022-76
[Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations

Keito Mori-Tamamura(Kanazawa Inst. of Tech.),  Yuya Morimoto(Kanazawa Inst. of Tech.),  Atsushi A. Yamaguchi(Kanazawa Inst. of Tech.),  Susumu Kusanagi(Sony),  Yuya Kanitani(Sony),  Yoshihiro Kudo(Sony),  Shigetaka Tomiya(Sony),  

[Date]2022-11-25
[Paper #]ED2022-40,CPM2022-65,LQE2022-73
High Efficiency of 230nm band AlGaN based LED by using Al Compositionally Graded Layer

Noritoshi Maeda(RIKEN),  Yukio Kashima(RIKEN),  Eriko Matsuura(RIKEN),  Yasushi Iwaisako(NT),  Hideki Hirayama(RIKEN),  

[Date]2022-11-25
[Paper #]ED2022-45,CPM2022-70,LQE2022-78
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